Production equipment capable of regulating input gas temperature

Abstract

Disclosed is a semiconductor manufacture apparatus of adjusting, air-input temperature, comprising a reaction chamber and an air temperature control device, the reaction chamber is the reaction place for air in plasma state and the air temperature control device is used to adjust the air temperature before it entering the reaction chamber to make its temperature approaching that of the reaction chamber.

Description

【Technical field】 [0001] The invention relates to a manufacturing device capable of adjusting the temperature of input gas, in particular to a manufacturing device suitable for improving the qualified rate of semiconductor manufacturing and capable of adjusting the temperature of input gas. 【Background technique】 [0002] In the production of thin film transistors for modern semiconductors or liquid crystal display panels, production equipment such as physical vapor deposition, chemical vapor deposition, and dry etching are indispensable production equipment. The common operating principle of the above manufacturing equipment is to use plasma in the reaction chamber to perform thin film deposition or etching. When performing deposition or etching, such as argon (Ar), water (H 2 O), oxygen, hydrogen, nitrogen and other gases, but the reaction chamber must be formed or etched at a temperature higher than room temperature, which will cause some manufacturing problems. Taking ...

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Problems solved by technology

The gas flowing into the reaction chamber at room temperature is particularly likely to cause the film on the mask to be peeled off due to the difference in temperature, resulting in a decrease in the product yield.

Therefore, the mask and other devices in the reaction chamber must be cleaned frequently. After a certain period of use, they must be cleaned and special surface treatment is performed to prevent the peeling film inside the reaction chamber from causing product defects and reducing the qualified rate of the product.

In addition, in addition to the above-mentioned problems caused by the lack of temperature parameter setting in the reaction chamber during the production process, the existing production equipment cannot increase the particle collision probability and film formation rate by means of gas energy, but can only improve the equipment Increase the film formation rate and production capacity by means of power

Increasing the power will easily lead to an increase in the phenomenon of arc discharge, which will increase the phenomenon of particles and splashes on the film, and reduce the uniformity of the coating

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