Neodymium doped bismuth titanate nano line array ferro-electric storage material and its synthetic method

Abstract

The present invention relates to nanometer line array ferroelectric storage material of (Bi,Nd)4Ti<3O12 (BNT) epitaxially growing in c axis on the substrate and its synthesis process. It is synthesized through selecting substrate capable of matching the lattice of BNT material, magnetically controlled sputtering Au or Pt quantum dots as catalyst, compounding precursor solution containing Bi3, Nd3+ and Ti4+, and setting the precursor solution inside high pressure reactor to grow the BNT epitaxially growing in c axis under strictly controlled hydrothermal synthesis conditions. Using the nanometer line array in vertical record mode can raise the storing capacity greatly so as to reduce the device size. The ferroelectric nanometer line array is expected to substitute ferroelectric film used as storing medium.

Description

technical field [0001] The invention relates to a novel ferroelectric storage material, in particular to a neodymium-doped bismuth titanate [(Bi, Nd) with a high c-axis orientation oriented growth on a substrate. 4 Ti 3 o 12 , BNT] nanowire array ferroelectric storage material and its synthesis method. Background technique [0002] Ferroelectric memory materials are important materials for modern microelectronics, microelectromechanical systems, information storage, etc. Among them, bismuth titanate (Bi 4 Ti 3 o 12 ) is a ferroelectric material with the simplest structure in bismuth layered compounds. It has excellent electrical, optical and optoelectronic properties, and has broad application prospects in modern microelectronics, microelectromechanical systems, and information storage. It has become the current A hot spot in the research of new functional materials. Bi has been reported to be prepared by MOCVD, Sol-Gel, RF-Sputtering, Plus Laser Deposition (PLD), ECRP...

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Problems solved by technology

The above a and b orientations are planar. Due to the critical size effect of the grains of the film, this will greatly limit the improvement of the storage density of the ferroelectric thin film memory, and it is difficult to meet the requirements of the current high-density ferroelectric memory development.

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