Method for producing film tranistor array and its driving circuit
A technology of thin-film transistors and driving circuits, which is applied in the field of manufacturing thin-film transistor arrays and their driving circuits, and can solve problems such as difficulty in reducing manufacturing process costs, difficulty in improving yield rates, and inability to effectively shorten panel time.
Inactive Publication Date: 2008-08-13
TPO DISPLAY
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Problems solved by technology
[0019] The existing thin-film transistor array and its driving circuit structure require a large number of photomasks for fabrication, usually eight (not including the fabrication of N-doped regions 114 and 116 ) or nine photomask processes are required. can be completed, making the manufacturing process cost difficult to reduce
In addition, due to the large number of photomasks required, the time for panel fabrication cannot be effectively shortened, and the yield rate is difficult to improve
Method used
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Embodiment Construction
[0039] 3(A) to 3(I) are cross-sectional views of the manufacturing process of the thin film transistor array and the driving circuit according to a preferred embodiment of the present invention. Please refer to FIG. 3(A), first provide a substrate 300, and sequentially form a polysilicon layer and an N+ doped thin film on the substrate 300, and then a first photomask process (Mask 1) defines the above-mentioned polysilicon layer and N+ doped thin films to form a plurality of island structures formed by stacking polysilicon layers 302a, 302b, 302c and N+ doped thin films 304a, 304b, 304c.
[0040] The above-mentioned polysilicon layer is formed by, for example, first forming an amorphous silicon film (a-Si) on the substrate 300, and then performing an excimer laser annealing (Excimer Laser Annealing, ELA) process on the amorphous silicon layer, so that the amorphous The crystalline silicon layer is crystallized into a polysilicon layer. The formation method of N+ doped film is...
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This invention relates to a method for manufacturing a film transistor array and a driving circuit including: providing a base plate to form a polysilicon layer and a doped film of a first kind of conduction, carrying out a first photo-mask technology to form multiple island structures, carrying out a second photo-mask technology to inject the doped regions of the second conduction type in the doped film of the first one, forming a first conduction layer on the structure and carrying out a third photo-mask technology to form a source and a drain and a lower electrode of a memory condenser, forming a first dielectric layer and a second conduction layer and carrying out a fourth photo-mask technology to form a stacked structure of a gating insulation layer and the grating and forming a dielectric layer and an upper electrode of the memory capacitor forming a protection layer on the structure and carrying out a fifth photo-mask to form an open-end for exposing the source and drain and the upper electrode of the capacitor, forming a conduction layer on the structure and carrying out a sixth photo-mask to form lead and pixel electrode.
Description
[0001] This application is a divisional application of No. 03101633.2 patent application for invention. technical field [0002] The invention relates to a manufacturing method of a thin film transistor array and its driving circuit, in particular to a manufacturing method of the thin film transistor array and its driving circuit which can be completed by six photomask processes. Background technique [0003] The rapid progress of the multimedia society is mostly due to the rapid progress of semiconductor components or man-machine display devices. As far as the display is concerned, the cathode ray tube (Cathode Ray Tube, CRT) has been monopolizing the display market in recent years because of its excellent display quality and economical efficiency. However, for the environment where individuals operate most terminals / display devices on the table, or from the perspective of environmental protection, if the trend of energy saving is used to predict that cathode ray tubes stil...
Claims
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IPC IPC(8): H01L21/84
Inventor 陈信铭
Owner TPO DISPLAY