Silicon wafer cleaning method
A washing method and technology for silicon wafers, which are applied in the directions of cleaning methods using liquids, detergent compositions, detergent compounding agents, etc., can solve the problems of removal of derivatives, can not fully improve the cleanliness of the wafer surface, etc., and achieve high cleanliness Effect
Active Publication Date: 2008-10-01
SUMCO CORP
View PDF9 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, the polymer components contained in the polishing slurry used in the mirror polishing process remain on the surface of the silicon wafer after the mirror polishing process. In the RCA washing disclosed in the above-mentioned Non-Patent Document 1, the SC-1 mixed solution makes the polishing slurry Derivatives of the macromolecular components are formed by reactions such as dehydration and condensation of the polymer components contained in the wafer. Since the derivatives are adhered to the wafer surface, even if the SC-2 wash is performed after the SC-1 wash, the adhered derivatives cannot be removed. substances are removed from the wafer surface, so the cleanliness of the wafer surface cannot be sufficiently improved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0027] Next, examples and comparative examples of the present invention will be described in detail.
[0028]
[0029] From June 2001 to January 2005, 1,320,000 mirror-polished silicon wafers manufactured at a rate of 30,000 per month were continuously subjected to the following cleaning.
[0030] First, a nonionic surfactant (manufactured by Wako Pure Chemical Industries, Ltd., product name NCW) was dissolved in ultrapure water to prepare an aqueous solution having a concentration of 0.2% by weight. In an aqueous nonionic surfactant solution heated to 90°C, and maintained for 3 minutes. Next, an aqueous solution of dissolved ozone having an ozone concentration of 20 ppm was prepared, and the silicon wafer was immersed in the aqueous solution of dissolved ozone maintained at room temperature for 3 minutes. Next, aqueous solutions in which 1.2% by weight of ammonia and 2.6% by weight of hydrogen peroxide were dissolved were prepared, and the silicon wafer was immersed in the...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention is a silicon wafer cleaning method, comprising a first cleaning process, in which, after completion of mirror polishing of the surface, the silicon wafer is immersed in a non-ionic surfactant aqueous solution; a second cleaning process, in which the wafer, after completion of the first cleaning process, is immersed in a dissolved-ozone aqueous solution; and, a third cleaning process, in which the wafer, after completion of the second cleaning process, is immersed in an aqueous solution containing ammonia and hydrogen peroxide; and in which the processes are performed in succession.
Description
technical field [0001] The invention relates to a method for washing silicon wafers. This application claims the priority of Japanese Patent Application No. 2005-231430 filed on August 10, 2005. Its contents are cited here. Background technique [0002] In the mirror polishing of silicon wafers, the surface of the silicon wafer mounted on the holding device is pressed against the abrasive cloth attached to the rotating platform with a certain pressure, and the polishing slurry is supplied between the abrasive cloth and the surface of the wafer while rotating The stage rotates to polish the wafer surface into a mirror-like finish. Usually, using SiO 2 Abrasives other than microparticles are suspended in a weak alkaline solution as a polishing slurry. In addition, in order to reduce haze or LPD and maintain wettability, the polishing slurry usually contains polymer components such as cellulose. [0003] In order to remove pollutants such as particles, organic pollutants, a...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/30B08B3/04
CPCB08B3/08H01L21/02052C11D1/66C11D11/0064C11D11/0047C11D3/3947C11D2111/44C11D2111/22
Inventor 奥内茂远藤光弘田中智也
Owner SUMCO CORP