Pattern formation method

Abstract

The method forms anticipant pattern of latent image on a resist film on base plate by convergence light irradiating. Based on position of pattern, the irradiating procedure adjusts intensity of convergence light, or size of pattern on the resist film. The invention disclosed method for forming anticipant pattern in short time and low cost.

Description

technical field [0001] The present invention relates to a method for forming a pattern on a resist film formed on a substrate such as a semiconductor wafer, and more particularly to a pattern forming method and apparatus for forming a latent image by irradiating light on a resist film on a substrate. Background technique [0002] In a process for forming a semiconductor element from a substrate such as a semiconductor wafer, a pattern is formed on the substrate using a mask such as a resist film. Formation of such a pattern requires, for example, fabrication of a photomask including a desired pattern with a width of several μm to several hundreds of μm in patterning of a micro channel device or the like. Usually, these photomasks are produced through an electron beam direct photolithography process and a chromium film etching process. Next, using a contact exposure device or a mask aligner, the resist film coated and formed on the substrate is kept in a state of close conta...

AI Technical Summary

Problems solved by technology

Although there is a method of forming a resist pattern with such an outline, there is a gray scale mask (gray scale mask) that gradually changes the transmittance in each area by changing the density of the dot pattern (dot pattern) step by step. However, the design and manufacture of grayscale masks are complicated, and the cost and time spent in photomask production are greatly increased. Therefore, in fact, in the research or trial production stage of micro flow channel devices that require trial and error Not applicable in

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