An aluminum-based electronic packaging material and a processing method thereof

Abstract

The invention discloses an aluminum-based electronic packaging material and a processing method thereof. The main ingredients of the material are (by weight percent): 20 to 80 percent of aluminum, 0.01 to 15 percent of graphene, 0.01 to 15 percent of carbon nanotubes and 2 to 70 percent of other components selected from at least one or more of diamond, silicon, tungsten, molybdenum, silicon carbide, titanium carbide, boron carbide, zirconium carbide, tungsten carbide, aluminum nitride, silicon nitride, boron nitride, titanium nitride, aluminum oxide, zirconium oxide, titanium boride and zirconium boride. The preparation method comprises the following steps of: firstly, uniformly mixing the powders of the components, continuously pushing the uniformly mixed powders into the grooves on the surface of the large roller by a screw pusher, rolling the aluminum-based alloy powders into strips under the rolling force of the large roller and a group of planetary rollers, and further extruding the strips from a molding die to obtain the required shape material. The method can continuously prepare the encapsulating material with low thermal expansion coefficient and high thermal conductivity.

Description

technical field [0001] The invention belongs to the field of electronic packaging materials, and in particular relates to an aluminum-based electronic packaging material with high heat dissipation efficiency and low thermal expansion coefficient and a processing method thereof. Background technique [0002] At present, the semiconductor materials used in integrated circuits are generally Si or GaAs. Due to the rapid increase of the transistor density of integrated circuits, the heat generation of the chip has risen sharply. The thermal stress and heat dissipation caused by the mismatch of thermal expansion coefficient between the packaging material and the chip Thermal fatigue from poor performance can cause integrated circuits to fail. According to statistics, every time the temperature rises by 10°C, the life of GaAs or Si microwave circuits will be shortened to 1 / 3 of the original. In view of this, the modern integrated circuit industry pays more and more attention to pac...

AI Technical Summary

Problems solved by technology

Due to the second phase Si, SiC, diamond, W, Mo, Al 2 o 3 The melting point of the aluminum-based composite electronic packaging material produced by the casting method is not uniform in composition and structure, and its performance is unstable.

The impregnation method infiltrates molten aluminum into the second-phase skeleton prefabricated parts, which requires prefabricated second-phase skeletons, and the production process is complicated, the cycle is long, and the cost is high

The spray deposition method uses a high-pressure inert gas flow to atomize the molten aluminum liquid, and sprays heated ceramic particles into it. After the two phases are mixed, they are deposited on the prefabricated substrate. Because the fluid is unstable during the spraying process, it is difficult to control. At present, only a small number of companies in the world (such as Ospray) have mastered its industrialization process, and the process has a long production process, complex process and high cost.

The powder metallurgy method mixes aluminum powder with silicon powder or silicon carbide powder, uses a hot-press sintering furnace, puts it into a mold, and heats and compresses it to form. This method is not continuous in production and can only be produced intermittently in a single furnace, with low efficiency and high cost.

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