Method for patterning a ferroelectric polymer layer

Abstract

Ferroelectric polymers such as for example copolymers of vinylidenedifluoride (VDF) and trifluoroethylene (TrFE) may be patterned by spincoating the ferroelectric polymer layer from a ferroelectric spincoating solution, which comprises a photosensitive crosslinker, onto a substrate followed by irradiating the ferroelectric polymer layer through a mask and removing the unexposed parts of the ferroelectric polymer layer.

Description

technical field [0001] The present invention relates to a method for patterning ferroelectric polymer layers in ferroelectric devices, such as ferroelectric memory elements, and other electronic components, such as memory elements, made according to said method. Background technique [0002] Memory technologies can be broadly divided into two categories: volatile and nonvolatile memory. Volatile memories, such as SRAM (Static Random Access Memory) and DRAM (Dynamic Random Access Memory), lose their stored information when power is turned off, while nonvolatile memories based on ROM (Read Only Memory) technology memory without losing their stored information. DRAM, SRAM and other semiconductor memories are widely used for information processing and high-speed storage in computers and other devices. In recent years, EEPROM and flash memory have been introduced as nonvolatile memories, which store data as charges in floating gate electrodes. Non-volatile memory (NVM) is used...

AI Technical Summary

Problems solved by technology

However, etching with oxygen plasma can cause the destruction of the FEP-laden substrate, and in the case of plastic or polymer integrated circuits often made of organic layers, the implantation of foreign atoms or ions can occur.

This is disadvantageous in the processing of electronic or memory devices as it may cause leakage problems

Moreover, in the case of incomplete etching, an unwanted residual layer may be left on the surface of the substrate carrying the FEP layer.

Images