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Non-volatile semiconductor memory

A non-volatile, semi-conductive technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, static memory, etc., can solve the problems of complicated and expensive manufacturing process, and achieve the reduction of manufacturing cost, space reduction, and precious saving Effect

Inactive Publication Date: 2008-12-10
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its disadvantage is that the manufacturing process is complex and therefore expensive
Another disadvantage is that a relatively large area of ​​semiconductor substrate is required to accommodate separate coupling capacitors

Method used

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Embodiment Construction

[0015] A display device, such as a liquid crystal display, comprises at least means, such as an integrated circuit, for controlling the display device. For storing data, the apparatus for controlling a display device may comprise a non-volatile semiconductor memory having one or more EPROM / EEPROM memory cells. An EPROM memory cell of a nonvolatile semiconductor memory includes a floating gate transistor and a coupling capacitor. EEPROM memory cells typically additionally include access transistors. In order to electrically address the various elements in a memory cell, a non-volatile semiconductor memory includes lines, namely word lines and bit lines.

[0016] The floating gate transistor comprises a field effect transistor, preferably a MOS (Metal Oxide Semiconductor) field effect transistor and a polysilicon layer. More preferably the field effect transistor is an N-channel MOS field effect transistor. A field effect transistor consists of an emitter (source), a collecto...

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Abstract

A non-volatile semiconductor memory, comprising at least one EPROM / EEPROM storage unit, the storage unit includes a floating gate transistor and a coupling capacitor, the floating gate transistor includes a field effect transistor and a polysilicon layer, and the coupling capacitor includes a first electrode and a second electrode and a dielectric interposed between the electrodes, the first electrode of the coupling capacitor is electrically coupled to the polysilicon layer of the floating gate transistor, the control electrode of the floating gate transistor forms the second of the coupling capacitor electrode. The invention also relates to a display device and an apparatus for controlling the display device, each of which includes a non-volatile semiconductor memory.

Description

technical field [0001] The present invention relates to a non-volatile semiconductor memory comprising at least one EPROM (Erasable Programmable Read Only Memory) / EEPROM (Electrically Erasable Programmable Read Only Memory) memory cell comprising a floating gate transistor and a coupling capacitor, the floating gate transistor including a field effect transistor and a polysilicon layer, the coupling capacitor including a first electrode and a second electrode and a dielectric interposed between the electrodes. The invention also relates to a display device and a device for controlling a display device. Background technique [0002] EPROM / EEPROM memory cells are used to build non-volatile semiconductor devices, especially for integrated circuits (embedded EPROM / EEPROM) and generally for use in computer or microprocessor controlled devices for storing programs and / or data, these programs and / or data should be retained when power is not applied. A so-called driver circuit for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L29/788H01L29/423G11C16/04H10B10/00H10B12/00H01L21/02H01L21/28H01L21/336H01L21/8247H01L29/792H10B41/00H10B69/00
CPCH01L28/60H01L29/42324H01L29/66825H01L29/40114H10B41/00H10B69/00
Inventor J·索罗德扎迪瓦
Owner NXP BV
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