Nonvolatile storage unit in high speed

Abstract

A high speed storing unit of nonvolatile type is prepared as connecting grid of the first FET to line selected line and one of source / drain (SD) electrodes on the first FET to column selected line as well as another one to grid of the second FET and one of SD electrodes of the third floating gate FET (TTFGFET), connecting one of SD electrodes of the second FET to grid of TTFGFET and leading out another one to form programmable end, forming one being not connected to the first FET and being one of SD electrodes on TTFGFET to be precharge end, carrying out stored information transfer between the second FET and TTFGFET through different state of external connection at two said ends.

Description

technical field [0001] The present invention relates to memory, and more particularly, to a nonvolatile high-speed memory unit and a nonvolatile high-speed memory using the memory unit. Background technique [0002] Semiconductor memory is a device widely used in computer, communication and other fields at present. Semiconductor memory uses semiconductor circuits with memory characteristics to store digital information, and can be divided into volatile memory and non-volatile memory according to the persistence of its stored data. Volatile memory units have the characteristics of fast access speed, random access without order, and data loss when power is off. Common volatile memories include SRAM, DRAM, SDRAM, DDR, RAMBUS, etc. Non-volatile memory has the characteristics of long-term data storage after power failure, rewritable erasability, and long writing time. Common non-volatile memories include FLASH, EPROM, and EEPROM. [0003] DRAM memory utilizes the characteristic...

AI Technical Summary

Problems solved by technology

However, the writing cycle of Flash is very long, and it must be erased before writing, resulting in very slow random writing, which is more than 1000 times slower than DRAM

Images