Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solid photographic device improving linear characteristic of photodiode and its driving method

A solid-state imaging device and photodiode technology, which is applied in the direction of electric solid-state devices, radiation control devices, color TV components, etc., can solve the problem that the saturation signal charge Qs cannot be estimated too much, so as to suppress blurring and expand linearity Range, sensitivity improvement effect

Inactive Publication Date: 2009-02-04
PANASONIC CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The second bias period is the invalid data output period starting from the exposure period in the same figure, but at least includes the second field output period.
[0019] However, in the prior art, when the substrate bias modulation is performed before the end of the exposure, it can be estimated that the decrease will increase the saturation signal charge Qs that decreases with time when the mechanical shutter blocks light. To prevent blurring during this period, it is necessary to pre-set the height of the overflow barrier OFB according to the second bias voltage to be lower than the potential barrier of the readout gate, and there is a limit on the amount of bias voltage modulation
Therefore, the increase in the saturation signal charge Qs cannot be overestimated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid photographic device improving linear characteristic of photodiode and its driving method
  • Solid photographic device improving linear characteristic of photodiode and its driving method
  • Solid photographic device improving linear characteristic of photodiode and its driving method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0064] The solid-state imaging device according to the embodiment of the present invention is characterized in that (A) at the start of the exposure period (see T3 to T4 in FIG. 7 ), the barrier height of the overflow barrier OFB is set to be higher than the barrier height of the readout gate. higher (see Figure 12A ), (B) In addition, after the exposure period is completed and before the vertical CCD is turned out at a high speed (refer to T5 in Figure 7), the barrier height of the overflow barrier OFB is temporarily reduced, and the excess charge is transferred to the substrate (refer to Figure 13 , Figure 14 ). Thereby, the linearity characteristic of the photodiode is improved to increase the sensitivity.

[0065] Figure 4 It is a block diagram showing a schematic configuration of the solid-state imaging device in the embodiment of the present invention. The solid-state imaging device 1 includes a lens 2 , a mechanical shutter 3 , a drive unit 4 , a signal processi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The driver unit of the solid state image sensing apparatus of the present invention changes the substrate bias voltage from the first bias voltage to the second voltage which is lower than the first bias voltage and is for making a height of the overflow barrier higher than the height of the barrier in the readout gate and lowers the height of the overflow barrier by superimposing the saturation signal control pulse on the second bias voltage after the end of the exposure period and before sweeping out all the signal charge of the vertical CCDs.

Description

technical field [0001] The invention relates to a CCD (Charge Coupled Device) solid-state imaging device adopting an overflow-drain OFD structure and a method thereof. Background technique [0002] In recent years, digital video cameras, digital video cameras, and mobile phones with video cameras have become widespread, and image sensors such as CCD imaging devices have been miniaturized along with higher resolution. [0003] FIG. 1 is a block diagram showing the configuration of a conventional CCD solid-state imaging device described in Patent Document 1 and the like. In FIG. 1, a solid-state imaging device 10 has a plurality of photodiodes 11, a plurality of readout gates 12, a plurality of vertical CCDs 13, a horizontal CCD 15, an output amplifier 16, a substrate bias generating circuit 20, and a transistor Q1 arranged two-dimensionally. . In addition, FIG. 1 also shows a transistor Q2 and resistors R1 to R3 as a circuit for modulating a semiconductor substrate bias vol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H01L27/14H04N3/15H01L27/148H04N25/00
CPCH04N3/1568H04N5/3728H04N5/3592H04N25/622H04N25/73G05F3/205G05F3/24H04N25/766
Inventor 河野明启武藤信彦藤田武
Owner PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products