A wavelength selection light switch based on Prague grates and MOS structures
A MOS structure and wavelength selection technology, applied in the direction of optical waveguide light guide, light guide, optics, etc., can solve the problems of insufficient tuning speed of liquid crystal tunable filters, complex design of tunable filters, and difficulty in integration, etc., to achieve easy integration and expansion , Convenient and low-cost manufacturing, small size effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0022] The top layer of silicon with a thickness of 6 μm is selected as the material of the substrate and the semiconductor material layer. The top layer of silicon is used as the core layer of the semiconductor material layer and the optical waveguide. The oxide layer and the bottom layer of silicon together form the substrate, and the oxide layer serves as the bottom layer The role of the limiting layer. Ridge waveguides were then etched on the top silicon-on-insulator silicon using photolithography and etching, with the ridges 2 μm high and 3 μm wide. A Bragg grating with a grating period of 1 μm is etched on the ridge. Then, ion implantation is used to form two highly doped P + Area. After the above process is completed, a 3 μm silicon nitride layer is grown on the core layer, and finally the source, drain and gate are fabricated on the silicon nitride layer. Thus, a wavelength selective optical switch capable of fast wavelength selection and integratable can be complet...
Embodiment 2
[0024] The top layer of silicon with a thickness of 6 μm is selected as the material of the substrate and the semiconductor material layer. The top layer of silicon is used as the core layer of the semiconductor material layer and the optical waveguide. The oxide layer and the bottom layer of silicon together form the substrate, and the oxide layer serves as the bottom layer The role of the limiting layer. Ridge waveguides were then etched on the top silicon-on-insulator silicon using photolithography and etching, with the ridges 2 μm high and 3 μm wide. A Bragg grating with a grating period of 1 μm is etched on the ridge. Then, ion implantation is used to form two highly doped P + Area. After the above processes are completed, the core layer is oxidized to form a 3μm silicon dioxide layer, and finally the source, drain and gate are fabricated on the silicon dioxide layer. Thus, a wavelength selective optical switch capable of fast wavelength selection and integratable can ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More