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Polishing pad and chemical and mechanical polishing method

A chemical machinery, polishing pad technology, applied in surface polishing machine tools, grinding/polishing equipment, electrical components, etc., can solve the problem that the wafer surface cannot meet the application requirements of the wafer surface, etc., and achieve high surface flatness and smoothness. The effect of high precision and improved yield

Active Publication Date: 2009-04-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is that the surface of the wafer obtained by chemical mechanical polishing in the prior art cannot meet the application requirements of optical devices for image transmission and products with higher requirements on the surface quality of the wafer

Method used

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  • Polishing pad and chemical and mechanical polishing method
  • Polishing pad and chemical and mechanical polishing method
  • Polishing pad and chemical and mechanical polishing method

Examples

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Effect test

Embodiment 1

[0040]The polishing pads currently used in the chemical mechanical polishing process are all polishing pads with grooves on the polishing surface. There are many shapes of the grooves, which can be concentric rings, spirals, or polygons such as triangles, quadrilaterals, pentagons, etc., and concentric rings are more commonly used. The use of the polishing surface with grooves not only has the function of supplying the polishing liquid during polishing, so that the polishing liquid is more evenly distributed to the polishing surface, but also has the function of temporarily retaining waste such as polishing debris and used polishing liquid during polishing. It also functions as a discharge passage for discharging this waste to the outside. Therefore, the polishing pad with grooves has become a more general polishing pad in the chemical polishing process.

[0041] The polishing pad with grooves can be a hard polishing pad or a soft polishing pad. Different polishing pads can b...

Embodiment 2

[0065] The invention also proposes a new chemical mechanical polishing method. The key to polishing is to use a polishing pad with a flat polishing surface whose roughness is less than 20um for polishing. The flat polishing surface mentioned in this embodiment means that the polishing surface has no grooves on the surface compared with the polishing pad in the prior art.

[0066] The aforementioned polishing pad having a flat polishing surface with a roughness of less than 20 um may be a soft polishing pad. Due to the porous structure on the surface of the soft polishing pad, the dispersion ability of the polishing liquid can be controlled. Therefore, the effect of polishing alone is better, but the polishing speed and efficiency are low.

[0067] The above-mentioned polishing pad having a flat polishing surface with a roughness of less than 20 um may also be a hard polishing pad, and the hard polishing pad includes a multi-layer hard polishing pad. The so-called hard polishi...

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Abstract

The invention provides a polishing cushion, which is provided with a flat polishing surface.The rough thickness of the polishing surface is less than 20 microns. The polishing cushion is hard or thin. The invention also provides a chemical mechanical polishing method, which adopts a polishing cushion to polish. The polishing cushion is provided with a flat polishing surface, and the rough thickness of the polishing surface is less than 20 microns. A preferred technique proposal is that, before the polishing cushion, which is provided with a flat polishing surface whose rough thickness is less than 20 microns, is used to polish, a polishing cushion whose polishing surface is provided with a groove is firstly used to polish; and then the polishing cushion, which is provided with a flat polishing surface whose rough thickness is less than 20 microns, is used to polish, and the polishing height is from 500 to 3000. The method overcomes the defects of the present polishing cushion, can make the surface of the wafer polished by chemical machinery flatter and can make the roughness lower than 10nm.

Description

technical field [0001] The invention relates to a chemical mechanical polishing process in a semiconductor manufacturing process, in particular to a chemical mechanical polishing pad and a chemical mechanical polishing method for high flatness of the wafer surface. Background technique [0002] The chemical mechanical polishing (CMP) process was introduced into the integrated circuit manufacturing industry by IBM in 1984, and was first used in the planarization of the intermetallic insulating dielectric (IMD) in the subsequent process, and then used for tungsten (W) through the improvement of equipment and processes. planarization for shallow trench isolation (STI) and copper (Cu) planarization. Chemical Mechanical Polishing (CMP) is the fastest growing and most important technology in IC manufacturing process in recent years. [0003] The CMP polishing process is to use mechanical force to act on the surface of the wafer in the atmospheric environment of the clean room to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D17/00B24B29/00H01L21/304B24D99/00
Inventor 蒋莉邹陆军常建光
Owner SEMICON MFG INT (SHANGHAI) CORP