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Heat sink for encapsulation of electroabsorption modulation laser

A technology of electroabsorption modulation and absorption modulation, which is applied to the structural details of lasers, semiconductor lasers, and laser components, etc., can solve the problems of reducing the response bandwidth of integrated light sources and the impact of high-frequency characteristics of devices, and achieve the goal of improving high-frequency response characteristics Effect

Inactive Publication Date: 2009-05-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This photoelectric coupling effect will reduce the response bandwidth of the integrated light source and have a great impact on the high frequency characteristics of the device

Method used

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  • Heat sink for encapsulation of electroabsorption modulation laser
  • Heat sink for encapsulation of electroabsorption modulation laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0032] see figure 2 as shown, figure 2 It is an embodiment of the application of the present invention, and it is a test assembly diagram of a heat sink with a bypass capacitor structure used for electro-absorption modulation laser packaging, except for a heat sink with a bypass capacitor structure used for electro-absorption modulation laser packaging Also includes:

[0033] An electro-absorption modulation laser 7 to be tested; wherein the electro-absorption modulation laser 7 to be measured is placed at the T foot position of the ground electrode 2 with an inverted T-shaped structure, and the light outlet of the electro-absorption modulation laser 7 to be measured is close to the ground electrode 2 edges.

[0034] Two welding pads 8 and 9; wherein the welding pads 8 and 9 are respectively the top pads of the DFB laser and the EA modulator of the electro-absorption modulation laser 7 to be tested.

[0035] Three gold wires 10, 11, 12; wherein the gold wire 10 is connect...

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Abstract

The invention provides a heat sink which is used for encapsulating electrical absorbing modulation laser, comprising a heat sink, a first signal electrode which is plated at one side of the heat sink in evaporation and used for providing bias current which is required by a DFB laser when the electrical absorbing modulation laser is in use, a second signal electrode which is plated at the upper end of the other side of the heat sink in evaporation and used for providing reverse bias voltage and high-frequency modulation signals which are required by an EA modulator when the electrical absorbing modulation laser is in use, a film resistance which is arranged on the heat sink, arranged at one side of the second signal electrode and connected with the second signal electrode, a grounding electrode which is plated on the surface of the heat sink in evaporation and shaped like an inverted T structure and is connected with the film resistance, and a bypass capacitor which is arranged on the grounding electrode and close to the first signal electrode. The bypass capacitor conducts the coupling electric signals between the DFB laser and the EA modulator to the ground.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and more specifically relates to a heat sink used for encapsulating an electroabsorption modulation laser. Background technique [0002] The monolithic integrated device of distributed feedback (DFB) laser and electroabsorption (EA) modulator, that is, electroabsorption modulated laser plays an important role as a reliable light source in long-distance high-speed optical fiber transmission systems. The integrated light source uses external modulation technology to avoid the interaction between photons and electrons in the laser during high-speed modulation, and reduces the large chirp caused by direct modulation. Moreover, the integrated light source also has small size, high coupling efficiency, and low chirp Etc. The heat sink used for integrated device packaging cannot use the heat sink used by general discrete devices because: [0003] 1. The electrical signals required f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/024H01S5/022H01S5/02
Inventor 侯广辉刘宇祝宁华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI