Improvig technique for reducing defect of metalic wire
A metal wire and defect technology, which is applied in the field of improved technology for reducing metal wire defects, can solve problems such as the effective prevention of Al voids, and achieve the effects of reducing Al voids, a simple process flow, and a reduced thickness
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Embodiment 1
[0014] 1. Preparation of bottom layer Ti / TiN sputtering film: At present, Endura5500 equipment (Applied Materials, Inc., USA) is commonly used for sputtering in the production line. The Ti and TiN films are deposited sequentially in the Ti / TiN sputtering chamber with a conventional process, and the thicknesses are 10nm and 25nm respectively.
[0015] 2. Sputtering of the Al layer: In the Al sputtering chamber, the composition of the Al target is Al-Cu, Cu accounts for 1%, the sputtering film thickness is 420 nm; the sputtering temperature is 300°C.
[0016] 3. Preparation of Ti / TiN sputtered film on the top layer: Ti and TiN films were sequentially formed on the Al layer by the method of step 1, with thicknesses of 10nm and 25nm respectively.
[0017] 4. After etching the bottom-up metal wire structure of Ti, TiN, Al, Ti, TiN, it needs to be annealed in the furnace, temperature: 440℃, annealing gas: N 2 -H 2 (10%H 2 ). Then HDP-CVD deposited SiO 2 .
Embodiment 2
[0019] 1. The sputtering equipment is the same as in Example 1, and the underlying Ti / TiN films are formed sequentially from bottom to top, and the thicknesses are 5nm and 30nm respectively.
[0020] 2. Al layer deposition is carried out, the composition of the Al target is Al-Cu, Cu accounts for 0.8%, the sputtering film thickness is 400 nm; the sputtering temperature is 250°C.
[0021] 3. Deposit Ti / TiN sequentially on the Al layer by the method of step 1, and the film thicknesses are 5nm and 30nm respectively.
[0022] 4. Etching and annealing the metal wire structure formed above respectively Ti, TiN, Al, Ti, TiN from bottom to top, the temperature is 460°C, and the annealing gas is N 2 -H 2 , H 2 5%. Then HDP-CVD deposited SiO 2 .
Embodiment 3
[0024] 1. The sputtering equipment is the same as in Example 1, and the underlying Ti / TiN films are formed sequentially from bottom to top, and the thicknesses are 15nm and 20nm respectively.
[0025] 2. Al layer deposition is carried out, the composition of the Al target is Al-Cu, Cu accounts for 1.2%, the sputtering film thickness is 440 nm; the sputtering temperature is 350°C.
[0026] 3. Deposit Ti / TiN sequentially on the Al layer by the method of step 1, with film thicknesses of 15nm and 20nm respectively.
[0027] 4. Etching and annealing the above formed metal wire structure respectively Ti, TiN, Al, Ti, TiN from bottom to top, the temperature is 420°C, and the annealing gas is N 2 -H2,H 2 15%. Then HDP-CVD deposited SiO 2 .
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