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Solid state device

A technology of solid-state devices and solid-state components, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device parts, semiconductor devices, etc., can solve the problems of impossibility and degradation of transparent resin, and achieve the prevention of deterioration over time, good stability, good The effect of weather resistance

Inactive Publication Date: 2009-07-29
TOYODA GOSEI CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A problem with solid-state devices is that transparent resins are degraded due to light emitted from solid-state components
[0007] However, the solid-state devices in JP-A-08-102553 and JP-A-11-177129 need to be produced by processing a glass material that is still hard even when a low-melting glass is used, and it is impossible to utilize a conventional resin sealing process. implement the device

Method used

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Examples

Experimental program
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Effect test

no. 1 approach

[0057] Figure 1A is a longitudinal sectional view showing an LED as a solid-state device in a first preferred embodiment according to the present invention, Figure 1B is showing Figure 1A Side view of the LED element in .

[0058] Composition of LED 1

[0059] like Figure 1A As shown, an LED (= light emitting diode) 1 as a solid-state device includes: a flip-chip LED element 2 formed of a GaN-based semiconductor material, an Al substrate as an inorganic material on which the LED element 2 is mounted. 2 o 3 Substrate 3, formed on Al 2 o 3 A circuit pattern 4 made of tungsten (W)-nickel (Ni)-gold (Au) on the substrate 3, an Au stud bump 5 electrically connecting the LED element 2 and the circuit pattern 4, and a transparent inorganic sealing part Bonding to Al while sealing LED element 2 2 o 3 Glass seal 6 of substrate 3 . In this embodiment, Al 2 o 3 The substrate 3 and the circuit pattern 4 constitute a power receiving / supplying portion on which the LED eleme...

no. 2 approach

[0153] Figure 5A is a plan view showing an LED as a solid state device in a second preferred embodiment according to the present invention, Figure 5B is a longitudinal cross-sectional view showing the LED, while Figure 5C is a bottom view showing the LED.

[0154] Composition of LED 1

[0155] like Figure 5A , Figure 5B As shown, the LED 1 includes a plurality of flip-chip GaN-based LED elements 2; 2 O 3 substrate 3; and made of tungsten (W) formed on Al 2 O 3 on the surface of the substrate 3 or formed in Al 2 O 3 Circuit pattern 4 in substrate 3 . Furthermore, Ni plating and Au plating are performed in the circuit pattern 4 . The LED 1 also includes an Au stud bump 5 that electrically connects the LED element 2 and the circuit pattern 4; 2 O 3 -SiO 2 -Li 2 O-Na 2 O-ZnO-Nb 2 O 5 made of base hot-melt glass for sealing the LED element 2 and bonding to Al 2 O 3 glass seal 6 of substrate 3; and intermediate layer and Al exposed in multiple layers 2 O ...

no. 3 approach

[0165] Image 6 is a longitudinal sectional view showing an LED as a solid-state device in a third preferred embodiment according to the present invention. More specifically, Image 6 shows a wafer sealed by glass and in the Al 2 O 3 A plurality of LEDs 1 formed on a substrate 3.

[0166] Composition of LED 1

[0167] like Image 6 As shown, the LED 1 includes a flip-chip LED element 2 formed of a GaN-based semiconductor material; an Al chip on which the LED element 2 is mounted 2 O 3 Substrate 3; in Al 2 O 3 A circuit pattern 4 formed on the substrate 3; Au stud bumps 5 electrically connecting the LED element 2 and the circuit pattern 4; and by B 2 O 3 -SiO 2 -Li 2 O-Na 2 O-ZnO-Nb 2 O 5 Made of base hot-melt glass, formed to have an optically shaped surface, used to seal the LED element 2 and bonded to Al by thermocompression 2 O 3 Glass seal 6 of substrate 3 . B 2 O 3 -SiO 2 -Li 2 O-Na 2 O-ZnO-Nb 2 O 5 The base hot melt glass has the same compositi...

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Abstract

A solid-state device having: a solid-state component; a power receiving / supplying portion on which the solid-state component is mounted for receiving / supplying power from / to the solid-state component; and a glass seal that seals the solid-state component department. The glass sealing part is formed of B2O3-SiO2-Li2O-Na2O-ZnO-Nb2O5 based glass, wherein the glass contains 21wt% to 23wt% of B2O3, 11wt% to 13wt% of SiO2, 1wt% to 1.5wt% of Li2O and 2wt% % to 2.5wt% Na2O.

Description

[0001] This application is based on Japanese Patent Application Nos. 2006-212633, 2007-112273, and 2007-190627, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to solid state devices equipped with solid state components sealed with glass material. Background technique [0003] Generally, solid state devices are known to be equipped with solid state components, such as light emitting diode (LED) elements, encapsulated with a transparent resin material such as epoxy resin. A problem with solid state devices is that the transparent resin is degraded by light emitted from the solid state components. Specifically, when a group III nitride compound semiconductor emitting short-wavelength light is used as a solid-state component, the transparent resin near the component turns yellow due to high-energy light emitted from the component and heat generated by the component itself, so that light is extracted Effi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L23/29C03C8/24
CPCH01L2224/48091H01L2924/0002H01L2224/16225H01L2224/49107
Inventor 大塚正明末广好伸沢登成人山口诚治相田和哉田角浩二渡部洋己
Owner TOYODA GOSEI CO LTD