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Picture element and its forming method, storage capacitor, display panel and photoelectric device

A storage capacitor and pixel technology, which is applied in optics, circuits, electrical components, etc., can solve the problems of storage capacitor area compression, storage capacity limitation, and heightening of storage capacitors

Active Publication Date: 2009-10-14
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, due to the increasing requirements for product resolution, the pixel size is gradually reduced. In order not to affect the aperture ratio, the area of ​​the storage capacitor is bound to be compressed, resulting in a decrease in capacitance.
In addition, the thickness of the dielectric layer of the storage capacitor manufactured by the known manufacturing process must be at least greater than 3000 angstroms The storage capacity of the storage capacitor is further limited

Method used

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  • Picture element and its forming method, storage capacitor, display panel and photoelectric device
  • Picture element and its forming method, storage capacitor, display panel and photoelectric device
  • Picture element and its forming method, storage capacitor, display panel and photoelectric device

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Embodiment Construction

[0082] Please refer to figure 1 , which shows a schematic top view of a pixel in a liquid crystal display according to an embodiment of the present invention. exist figure 1 In the figure, the pixel 100 is located on the substrate 106 , in an area divided by the intersection of the scanning lines 134 and the signal lines 136 , and has a switching element area 102 and a capacitor area 104 . In this embodiment, a capacitor stack 117 is provided at the capacitor area 104, and a thin film transistor is provided at the switching element area 102 for switching control of the pixel, wherein the gate stack 118 of the thin film transistor is connected to the scan line 134 The source / drain 122 is electrically connected to the signal line 136 and the semiconductor layer 108 at the switching element region 102, and the other source / drain 124 is electrically connected to the semiconductor layer 108 at the capacitor region 104 and the pixel electrode 132. sexual connection. In addition, ...

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Abstract

A pixel and its forming method, as well as a storage capacitor, a display panel and a photoelectric device. The storage capacitor is disposed on the substrate, and the storage capacitor includes a semiconductor layer, a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer. The semiconductor layer is disposed on the substrate, the first dielectric layer covers the semiconductor layer and the substrate, and the first conductive layer is partially disposed on the first dielectric layer. The second dielectric layer is disposed on the first conductive layer, and the second dielectric layer has an inclination to the side of the first conductive layer. The second conductive layer is partially disposed on the second dielectric layer. The invention can increase the capacitance value of the storage capacitor and maintain the stability of the pixel image.

Description

technical field [0001] The invention relates to a flat panel display, in particular to a storage capacitor of the flat panel display. Background technique [0002] The display area of ​​a flat panel display is composed of several pixels. Each pixel has a pixel electrode and a thin film transistor connected to the pixel electrode, and the signal line transmits a signal to the thin film transistor to turn on or off. After the pixel electrode provides the voltage, the thin film transistor will be turned off until the voltage is written into or deleted from the pixel electrode again when the thin film transistor is turned on by the scan line next time. [0003] However, in order to keep the voltage originally written into the pixel electrode before the next scan line turns on the thin film transistor, a storage capacitor (Storage Capacitor, C st ) to increase the overall capacitance, so that the voltage written into the pixel electrode can be maintained for a longer period of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/84G02F1/1362
Inventor 郑逸圣
Owner AU OPTRONICS CORP