Light-emitting device with increased quantum efficiency
A technology of light-emitting devices and light-emitting layers, which is applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as loss and quantum efficiency decline, and achieve the effect of precise adjustment
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment
[0040] On a transparent substrate 1 made of glass, ITO with a layer thickness of 150 nm was applied as anode 2 . α-NPD with a layer thickness of 30 nm was applied as first hole-transport layer 3 on the anode 2 by spin coating. A BCP first hole-blocking layer 4 with a layer thickness of 1 nm is applied on the hole-transport layer 3 . On the first hole blocking layer 4 is applied an emitting layer 5, i.e. Ir(ppy) embedded in TCTA 3 . The layer thickness of the light emitting layer 5 was 30 nm. A 10 nm-thick second hole-blocking layer 7 of BCP is applied on the emitting layer 5 . Alq was applied with a layer thickness of 40 nm on the second hole blocking layer 7 3 as the electron transport layer 12. A 151.5-nm-thick cathode 6 consisting of a 1.5-nm-thick lithium benzoate first layer and a 150-nm-thick aluminum second layer is applied to the electron-transport layer 12 .
[0041] Compared with the light emitting device without the first hole blocking layer 4, the quantum eff...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com