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Photo-etching illumination system

A lighting system and lithography technology, applied in the field of microlithography, can solve the problems of reducing the transmittance of the lighting system, increasing the complexity of the system structure, etc., and achieve the effects of continuously adjustable lighting coherence, avoiding energy loss, and simplifying the structure

Active Publication Date: 2009-11-11
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] A major disadvantage of the above-mentioned lighting system is that a relay lens 38 must be used to obtain a continuously adjustable one-dimensional trapezoidal light intensity distribution lighting field 39. The use of the relay lens 38 reduces the transmittance of the lighting system and increases the system structure. complexity of

Method used

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Embodiment Construction

[0047] The lithography illumination system of the present invention will be further described in detail below, and the "axis" referred to in the following all refers to the direction along the optical axis.

[0048] Such as Figure 4 As shown, the lithography illumination system of the present invention includes in turn from the object side to the image side: a light source 100 for generating an illumination beam of a specific wavelength, such as: 248nm, 193nm, 157nm, 126nm, etc.; a pupil shaping module 200 for receiving The illumination beam from the light source 100 forms an illumination beam with a specific cross-sectional shape; the microlens array module 300 receives the illumination beam from the pupil shaping module 200 and forms an illumination beam with a one-dimensional trapezoidal light intensity distribution; and the condenser lens 400, The illuminating light beam from the microlens array module 300 is received, and the condensed illuminating light beam is projecte...

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Abstract

The lithography illumination system provided by the invention relates to an illumination system for a semiconductor lithography machine. The lithography illumination system includes in turn: a light source for generating an illumination beam; a pupil shaping module for receiving the illumination beam generated by the light source and forming an illumination beam with a specific cross-sectional shape; a microlens array module for receiving the illumination beam from the pupil shaping module. the illumination beam of the module, and form an illumination beam with a one-dimensional trapezoidal light intensity distribution; and a condenser, receiving the illumination beam from the microlens array module, and projecting the converged illumination beam onto an illumination field; The module includes at least two microlens arrays and two pairs of knife-edge arrays. The lithography lighting system of the invention has simple structure and high transmittance, and can generate a one-dimensional trapezoidal light intensity distribution lighting field whose size can be adjusted and meets the requirement of telecentricity. The lithography illumination system of the present invention can be used on 248nm, 193nm or other wavelength lithography machines.

Description

technical field [0001] The invention belongs to the field of microlithography, and relates to an illumination system for a semiconductor photolithography machine, in particular to a lithography illumination system containing an astigmatic microlens element. Background technique [0002] Photolithography (also known as microlithography) is used to fabricate semiconductor devices. Photolithography uses various wavelengths of light, such as ultraviolet (UV), deep UV, visible light, etc., to produce fine patterns in semiconductor device designs. Many kinds of semiconductor devices can be fabricated by photolithography, such as diodes, transistors and integrated circuits. [0003] In the manufacturing process of semiconductor devices, in order to meet the requirements of dose control of lithography machines, the illumination system of scanning lithography machines is usually required to form an illumination field with a one-dimensional trapezoidal light intensity distribution, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/027
CPCG03F7/7035
Inventor 李仲禹李铁军
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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