Lighting module and method for the production thereof

Abstract

The invention relates to a lighting module having at least one thin-film light-emitting diode chip, which has a first and a second electrical connection edge and an epitaxially produced semiconductor layer sequence, which is deposited on a chip carrier with electrical connection lines. The semiconductor layer sequence has an n-conductivity semiconductor layer, a p-conductivity semiconductor layer and an electromagnetic radiation-generating region arranged between the two semiconductor layers and is arranged on a carrier. Furthermore, the semiconductor layer sequence has, on the main surface facing the carrier, a reflective layer which reflects at least part of the electromagnetic radiation generated in the semiconductor layer sequence back into the semiconductor layer sequence. The semiconductor layer sequence has at least one semiconductor layer with at least one microstructured, roughened surface. The decoupling surface of the thin-film light-emitting diode chip is essentially defined by the main surface facing away from the reflective surface and contains no housing material such as potting or encapsulation material.

Description

technical field [0001] The invention relates to a lighting module with at least one light source. Furthermore, the invention relates to a method for producing such a lighting module. Background technique [0002] Possible types of such lighting modules are described, for example, in EP 0 933 823 A2. In this case, the light-emitting diode chip is fastened on the lead frame and surrounded by the housing, so that the light coupling-out area of ​​the light-emitting diode chip adjoins the gaseous atmosphere. Such a design offers, in particular, the possibility of using a housing material which does not suffer aging under the influence of UV radiation and / or whose coefficient of thermal expansion is matched to that of the lead frame. A disadvantage of such semiconductor components is that the electromagnetic radiation of the light-emitting diode chip is coupled out directly to the air or to the gas. In this case, due to the generally rather high refractive index of semiconducto...

AI Technical Summary

Problems solved by technology

The disadvantage of this semiconductor device is that the electromagnetic radiation of the light-emitting diode chip is coupled directly to the air or to the gas

[0004] The disadvantage of this design is that when using light-emitting diode chips with relatively short emission wavelengths, in particular light-emitting diode chips that emit in the UV region, the high refraction-based potting or aging of the encapsulation material is The electromagnetic radiation emitted by the LED chips suffers from strong degradation

A further disadvantage is that such casting or encapsulation materials have a strongly different coefficient of thermal expansion compared to the semiconductor material of the light-emitting diode chip, which results in restrictions on the amount of material and thus on the size of the component

Furthermore, the encapsulation of light-emitting diode chips with potting or encapsulation materials is relatively more expensive and can amount to approximately 50% of the total production costs, for example in the case of TOPLEDs

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