Through-hole forming method
A technology of aperture and dielectric layer, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor quality of small aperture through holes, affecting the quality of electrical connection of integrated circuits, and easy deformation.
Active Publication Date: 2009-12-30
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
Especially for small-aperture through-holes that use 193nm photoresist to define patterns, because 193nm photoresist is more easily deformed, the phenomenon of diffraction fringes in through-holes defined by it is more serious
[0007] Today, with the rapid development of ultra-large-scale integrated circuits, the requirements for semiconductor manufacturing processes have become increasingly stringent, and higher expectations have been put forward for the precision of the formed devices. to the quality of the electrical connections within the integrated circuit must be addressed
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[0054] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0055] The processing method of the present invention can be widely used in various fields, and can utilize many suitable materials to make, and below is to illustrate by preferred embodiment, certainly the present invention is not limited to this specific embodiment, this field Common replacements known to those skilled in the art undoubtedly fall within the protection scope of the present invention.
[0056] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, which should not be used as a ...
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The invention discloses a through hole forming method, which includes steps of providing a substrate, arranging a medium layer on the substrate, defining a through pattern on the medium layer by a mask, using first pre-etching gas to perform the first pre-etching, removing a part of the medium layer which is not protected by the mask, utilizing second pre-etching gas to perform the second pre-etch, wherein the carbon / fluorine ratio of the second pre-etching gas is smaller than that of the first pre-etching gas, performing main etching, and removing a first medium layer which is not protected by the mask. The through hole forming method can form through holes with high quality on the premise of keeping small pore diameter.
Description
technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a through hole. Background technique [0002] With the rapid development of VLSI, the integration of chips is getting higher and higher, and the size of components is getting smaller and smaller, and the various effects caused by the high density and small size of devices have an increasing impact on the fabrication results of semiconductor processes. protrude. A typical example is the fabrication of small-aperture vias: as the size of devices shrinks, the sizes of various holes that need to be formed in chip fabrication are further reduced. However, when the size of the holes to be formed is below 110 nm, due to The reason for the exposure limit of the exposure machine in lithography is that it is difficult to define a through-hole pattern with an aperture that meets the requirements only by using lithography technology. [0003...
Claims
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IPC IPC(8): H01L21/768H01L21/311
Inventor 沈满华王新鹏刘乒孙武
Owner SEMICON MFG INT (SHANGHAI) CORP