Film preparation device and observation method for film growth

Abstract

The invention discloses a device adopting a physical method to prepare films on substrate material, and a method of observing film growth condition in the preparation process. A plating chamber in thedevice of the invention is consisted of a plating chamber shell and a bottom plate under the plating chamber shell. A charge valve and an observation window are arranged on a vacuum shell. A resistance heating evaporator, a radiar crucible evaporator, a sputtering target, an interference light source and a webcam are separately arranged on the bottom plate. A rotating tray driven by a rotation axis, a sample annealing heater and a device for fixing a making film sample arranged by the bottom of the sample annealing heater are arranged on a fixing frame. The method of the invention is that aninterference phenomenon formed on the film is observed when the film grows.

Description

technical field [0001] The invention relates to a device for preparing a thin film on a base material by using a physical method, and a method for observing the growth of the film during the preparation process. More precisely, the present invention relates to a device for forming a thin film on the surface of a base material by means of vacuum deposition evaporation or vacuum sputtering deposition, and using this device to indirectly observe the film-forming surface film during the preparation process. method of forming the process. Background technique [0002] Thin film materials have a wide range of applications in the research and manufacture of new optoelectronic devices. The process of forming a thin film on the surface of the base material by vacuum sputtering deposition is relatively common at this stage. The thin films mentioned here include metal thin films, non-metallic thin films, and organic thin films. Existing thin film preparation equipment includes vacuu...

AI Technical Summary

Problems solved by technology

However, when preparing different films in different equipment, it is necessary to re-establish vacuum working conditions, so the energy consumption is high and the efficiency is low.

Another shortcoming of the existing equipment is that when the film is annealed after preparation, the film sample needs to be taken out of the coating chamber and placed in another annealing heating device for annealing, which not only has low efficiency and high energy consumption, but also It will affect the performance of the film to a certain extent; since the film annealing treatment is also required to be carried out under vacuum conditions in some cases, it is also necessary to re-establish the vacuum working conditions

In addition, the existing film-making equipment cannot observe the growth of the film during the process implementation. To master the thickness of the film, the film-forming process parameters are generally controlled according to empirical values. Control the evaporation temperature and time of the evaporation source empirically to control the growth rate of the film thickness and the possible thickness of the film, and then take out the sample for actual measurement to obtain the vacuum thickness of the film

It can be seen that it is difficult to control the thickness of film growth by using the existing technology in actual application, and the efficiency is very low

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