High-tension integral gate change transistor three-level frequency-converter power cabinet

A technology of commutating thyristors and integrated gates, applied in the direction of output power conversion devices, circuits, electrical components, etc., can solve the problems of lack of mature products of IGCT converters, increase of IGCT turn-off voltage, increase of line stray inductance, etc. problem, to achieve the effect of compact structure, small stray inductance, and improved power density

Inactive Publication Date: 2007-07-18
北京金自能源科技发展有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the application technology of IGCT is very mature in the world, but it is still in its infancy in China, and there is no mature product of IGCT converter.
A complete IGCT active rectifier circuit or inverter circuit includes IGCT, anti-parallel diodes, clamping circuit devices, etc. If these components are dispersed and assembled and then electrically connected with busbars or wires, not only does it occupy a large volume, but also the wiring The loop area is larger, resulting in an increase in the stray inductance of the line
The increase of stray inductance will increase the turn-off voltage of IGCT. At this time, in order to ensure the safety of IGCT, the output current must be reduced, resulting in a decrease in output power.
In addition, the scattered installation of the power components of the IGCT is not conducive to the maintenance work

Method used

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  • High-tension integral gate change transistor three-level frequency-converter power cabinet
  • High-tension integral gate change transistor three-level frequency-converter power cabinet

Examples

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Embodiment Construction

[0012] 1 and 2 are a specific embodiment of the present invention. The three power phase modules 3 are placed horizontally and horizontally in the upper, middle, and lower sides of the cabinet 1. There are pulleys on the outer sides of the left and right ends of each power phase module 3, which are placed on the structural support frame 2 in the cabinet, and can slide back and forth. The rear side of each power phase module 3 is a stacked busbar 4 that is parallel to and close to the phase module. The output busbar of the power phase module is located under the stacked busbar 4 on the lower side behind the phase module. The vertical water pipes on the left and right sides of the cabinet are respectively inlet and outlet. The water pipe 6 and the water outlet pipe 7 are connected with the main water pipe at the bottom of the cabinet. The flexible water pipe 8 connected to the water inlet pipe 6 is connected to the water inlet of the radiator of the power phase module through th...

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Abstract

This invention relates to a high voltage integrated gate commutation transistor three-level inverter power tank including: a tank, a structure support frame, three compacted integrated gate commutation transistor power phase modules, a laminated bus, an output bus, an intake pipe, a delivery pipe, a hose and a quick connector, which is advantaged that the elements in IGCT applied circuit are integrated in a power tank and the volume is reduced, voltage level and power density are increased since a diode clamp three-phase three-level invert circuit is applied, and the power phase module is put on the tank inner structure support frame by a pulley, which is good for installation and debug of the system.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a high-voltage integrated gate commutated thyristor (The Integrated Gate Commutated Thyristor, IGCT for short) three-level frequency conversion power cabinet, which is suitable for 3-27MVA high-power converters , can be widely used in the field of medium voltage transmission. Background technique [0002] The integrated gate commutated thyristor IGCT is a power semiconductor switching device specially developed by ABB in Switzerland for medium voltage frequency converters. IGCT is based on the very mature GTO (Gate Turn-Off Thyristor) technology, which fundamentally reduces the complexity of the inverter design and improves the efficiency and reliability. IGCT combines the high-speed switching characteristics of an IGBT (Insulated Gate Bipolar Transistor) with the high blocking voltage and low conduction loss characteristics of a GTO (Gate-Off Thyristor)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/00H01L23/34H01L23/473H05K7/20
CPCH01L2924/0002
Inventor 李崇坚朱春毅崔春枝赵如凡
Owner 北京金自能源科技发展有限公司
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