Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for manufacturing thin-film transistor and semiconductor element

A technology of a thin film transistor and a manufacturing method, which is applied to the manufacturing field of thin film transistors, can solve the problems of high mask cost and difficulty in reducing manufacturing cost, and achieve the effects of reducing mask cost and avoiding alignment errors.

Active Publication Date: 2007-08-08
AU OPTRONICS CORP
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is worth noting that, due to the high cost of the mask, it is not easy to reduce the production cost of the known polysilicon thin film transistor 100 and its pixel structure.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing thin-film transistor and semiconductor element
  • Method for manufacturing thin-film transistor and semiconductor element
  • Method for manufacturing thin-film transistor and semiconductor element

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0060] 2A to 2K are schematic cross-sectional schematic diagrams showing the steps of the manufacturing method of the thin film transistor according to a preferred embodiment of the present invention, please refer to FIG. 2A to FIG. 2K together.

[0061] Referring to FIG. 2A , a patterned polysilicon layer 220 is formed on a substrate 210 . In one embodiment, the patterned polysilicon layer 220 is formed by the following steps, for example. First, an amorphous silicon layer (not shown) is formed on the substrate 210 . Then, an annealing process is performed to form a polysilicon layer (not shown) from the amorphous silicon layer. The annealing process is, for example, an excimer laser annealing process (Excimer Laser Annealing, ELA). Then, a photoresist layer (not shown) is formed on the polysilicon layer, and the photoresist layer is patterned using a first mask (not shown) to form a patterned photoresist layer (not shown) . Afterwards, the polysilicon layer is etched usin...

no. 2 example

[0081] The present invention also proposes a method for manufacturing a semiconductor element, most of the manufacturing steps of which are similar to the method for manufacturing the thin film transistor of the first embodiment, and the same steps will not be repeated. Here, only partial steps are shown as shown in FIGS. 3A to 3D .

[0082] 3A to 3D are schematic cross-sectional views showing partial steps of a method for fabricating a semiconductor device according to a preferred embodiment of the present invention. Please refer to FIG. 3A to FIG. 3D together.

[0083] Firstly, the steps described in FIGS. 2A to 2K are performed on the substrate 210 to fabricate the thin film transistor 200 . The TFT 200 is composed of a substrate 210, a patterned polysilicon layer 220, a gate dielectric layer 230, a first gate layer 242b and a second gate layer 244b. Wherein, a source / drain region 220 a , a channel region 220 b , and a lightly doped source / drain region 220 c are formed in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses one film transistor tube and its semi-conductor element process method, which comprises the following steps: firstly forming pattern multi-silicon layer for grating dielectric layer on baseboard; orderly forming first and second grating materials layer and sacrifice layer on grating dielectric layer; forming pattern light etch glue layer on sacrifice layer as mask film and forming pattern sacrifice layer by etching and on first and second grating materials layers to form source electrode and leakage electrode on multi-transistor silicon layer; after removing pattern light etching as mask film. After removing the pattern glue layer as mask film.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor element, and in particular to a method for manufacturing a thin film transistor (Thin Film Transistor, TFT). Background technique [0002] The advantages of Liquid Crystal Display (LCD) using Low Temperature Poly-silicon Thin Film Transistor (LTPS-TFT) are its thin thickness, light weight and good resolution, especially suitable for applications that require light weight and power saving on mobile terminal products. However, low temperature polysilicon thin film transistors still generate leakage current. Therefore, a lightly doped source / drain region, or lightly doped drain region (Lightly Doped Drain, LDD) is usually formed between the source / drain region and the channel region in the low-temperature polysilicon thin film transistor. to reduce leakage current. [0003] 1A to 1C are schematic cross-sectional diagrams showing the step-by-step process of a conventional manufa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/84
Inventor 丘大维陈昱丞
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com