Method for preparing nitrogen-doped modified TiO2 film under ammonia regulation and high pressure reaction device
A high-voltage reaction and nitrogen doping technology, which is applied in the fields of climate sustainability, electrical components, photosensitive equipment, etc., can solve the problem that the band gap is not easy to control, and achieve the effect of high conversion rate
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specific Embodiment approach 1
[0011] Specific implementation mode 1: In this implementation mode, ammonia gas controls nitrogen-doped modified TiO 2 The steps of the preparation method of the film are as follows: 1. At room temperature and under the condition of stirring at a speed of 90-120r / min, add 20-50ml of isopropyl titanate dropwise to 100-200ml with a concentration of 0.08-0.15mol / L HCl or HNO 3 Mix in the solution and react for 30min~2h; 2. In a water bath at 50~90℃, stir the mixture at a speed of 90~120r / min, and react for 5~10h; 3. Filter the reaction solution after step 2 ; Four, add secondary distilled water in the above-mentioned filtrate, make TiO 2 The weight percent concentration of the solution is 2-10%; 5. React the reaction solution treated in step 4 for 10-15 hours in a water bath at 180-250° C.; 6. Distill the reaction solution treated in step 5 to make TiO 2 The weight percentage concentration of the solution is 5-15%, and the nano-TiO 2 Slurry; seven, nano-TiO 2 Add an emulsifier...
specific Embodiment approach 2
[0018] Specific embodiment two: In this embodiment, in step one, HCl or HNO 3 The concentration of the solution is 0.1mol / L. Others are the same as in the first embodiment.
specific Embodiment approach 3
[0019]Embodiment 3: In this embodiment, a magnetic stirrer is used in step 1 and step 2. Others are the same as in the first embodiment.
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