Power circuit of field effect tube microwave amplifier
A microwave amplifier and field effect tube technology, which is used in improving amplifiers to reduce temperature/power supply voltage changes, high-frequency amplifiers, etc., can solve problems such as increasing costs, and achieve the effect of preventing burnout and simplifying the process of bias debugging.
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[0010] Please refer to FIG. 1 , which is a schematic diagram of a closed-loop current control FET DC bias, wherein the port Vd is connected to the drain of the FET; the port Vg is connected to the gate of the FET. Its working process is as follows:
[0011] 1. Through the voltage division of resistors R13 and R16, Vvc=VCC*R16 / (R13+R16) can be obtained, and Vd≈Vvc can be obtained through U3 and U4B, that is, the drain voltage is completely determined by R13 and R16, and has nothing to do with the drain current.
[0012] 2. Get Vic=VCC*R9 / (R4+R9) through the voltage division of resistors R4 and R9, first pass through the follower U3B, and add Vvc through the adder U4A (set R1=R10, R2=R5+R8), that is Vdh≈Vvc+Vic. The drain current of the FET is equal to the current flowing through R6, that is, Id=(Vdh-Vd) / R6≈Vic / R6.
[0013] The drain current of this FET is determined by R4, R9 and R6. Since the current limiting resistor R6 is reserved, the maximum drain current Id max=Vdh / R6 ...
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