Thermal control of deposition in dip pen nanolithography
A technology for thermal control and temperature control equipment, applied in the direction of devices, special surfaces, coatings, etc. that apply liquid to the surface, and can solve the problems of no start or stop deposition, no contact mode imaging, etc.
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Embodiment 1
[0038] Deposition of OPA—The OPA-coated AFM tip described above was rastered over four 500 nm square areas of the mica substrate at 2 Hz and 128 lines / scan, or a total scan time of 256 s. For each square, the temperature of the cantilever is increased, eventually exceeding the melting temperature of OPA. When the temperature of the tip remains below the melting temperature T of OPA m At 25°C or 57°C, no drawn squares will be obtained. Increase the tip temperature to 98°C, which is close to the melting temperature T of OPA m Causes a small amount of deposition. The average height of this region is 1.1 nm, which is slightly less than half the height of the entire molecule. When the temperature of the cantilever is increased to 122°C, a firm deposition can be seen finally, and the height of the constructed square pattern is 2.5nm, as shown in Figure 3, which represents the height of the entire molecule. The corresponding tribological imaging shown in Figure 4 demonstrates OPA...
Embodiment 2
[0042] Deposition of PDDT - tDPN is used for deposition conduction of the polymer located between the electrodes. The polymer is polyethylene (3-dodecylthiophene) PDDT, which is a useful semiconducting polymer for inorganic FETs. The tip was heated to ~200°C under nitrogen conditions (to avoid oxidation). The needle tip then scans from one electrode to the other within 2 minutes. The deposited lines had a thickness of 20 nm and a width of 150 nm and spanned a wide space of 800 nm.
Embodiment 3
[0044] Indium Deposition - Important for nanoscale circuits or the repair of photomasks used to form modern circuits, is the ability to write tiny conductive lines. tDPN is used to form indium, lower melting point metals and general electric welding. Figure 7 shows a series of 3um lines written at a tip speed of 3um / s. Each line was transferred 64 times (ie, 32 draw / redraw) by the deposition tip. The two top lines written at 95°C and 135°C are not shown, and the faint line on the bottom left is drawn at 156°C, which is close to the melting temperature of indium at 156.6°C. The bottom right line was written at 196°C, which is above the melting temperature of indium and shows robust deposition at this temperature.
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