Chemical rinse composition for removing resist stripper

A chemical cleaning and composition technology, applied in detergent compositions, non-surface-active detergent compositions, organic non-surface-active detergent compositions, etc., can solve problems such as corrosion of metal film layers

Active Publication Date: 2007-09-26
DONGJIN SEMICHEM CO LTD
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the use of chain-typeamine in the above method, corrosion of the metal film layer will occur on the metal wiring.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical rinse composition for removing resist stripper
  • Chemical rinse composition for removing resist stripper
  • Chemical rinse composition for removing resist stripper

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～8

[0036] Examples 1 to 8, and Comparative Examples 1 to 6

[0037] According to the following Table 1 and Table 2, the chemical cleaning composition was prepared.

[0038] Composition of chemical cleaning composition (parts by weight)

AEP

HEP

Water

EGME

BT

D-isoascorbic acid

Pyrogallol

Defoamer

1

0.1

0.3

98.47

1

0.2

0.01

0.01

Real

Give

example

2

0.4

98.67

1

0.2

0.01

3

0.4

98.87

1

0.2

0.01

0.01

4

0.1

0.3

99.51

0.5

0.06

-

0.02

0.01

5

0.2

0.2

99.52

0.5

0.06

-

0.02

-

6

0.3

0.1

99.52

0.5

0.06

-

0.02

-

7

0.5

-

99.4

0.5

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a chemical cleaning composition for cleaning a resist release agent, specifically, the present invention comprises: a) 0.05 parts by weight to 10 parts by weight of organic amine compounds; b) 0.05 parts by weight to 30 parts by weight An organic solvent in parts by weight; c) 0.005 parts by weight to 5 parts by weight of triazole preservatives; d) 0.005 parts by weight to 5 parts by weight of preservatives selected from hydroxyphenols, alkyl gallates and reducing agents ; e) balance water. The chemical cleaning composition for cleaning the resist stripping agent of the present invention has excellent cleaning ability and can prevent the corrosion of the metal film layer, and can replace methanol, ethanol, isopropanol, etc. used in the cleaning process in the past Pyrophoric substances, namely alcohol compounds, can effectively clean organic foreign matter such as release agent and inorganic foreign matter such as dust remaining on the substrate.

Description

Technical field [0001] The present invention relates to a chemical cleaning composition that can be used in the manufacturing process of TFT-LCD or semiconductor elements, and more specifically to a chemical cleaning composition for cleaning a resist release agent. It has excellent cleaning ability, can prevent the corrosion of the metal film, and does not have the problems of ignitability, storage and environment. In particular, it can replace alcohol compounds used in previous cleaning processes. In addition, since the copper layer has a strong adsorption characteristic of organic foreign matter, it will generate foreign matter that cannot be seen on the existing layer, and the present invention has an excellent cleaning effect on it. Background technique [0002] Generally, when manufacturing TFT-LCD or semiconductor elements by photolithography method, aluminum, aluminum alloy, copper (copper) are formed on substrates such as glass and silicon wafers. ) And other insulating f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42C11D7/50C11D7/32C11D7/26
CPCE04H15/30E04H15/48E04H15/58E04H15/64E04H2015/326
Inventor 金圣培朴熙珍尹锡壹金柄郁辛成健
Owner DONGJIN SEMICHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap