Illuminator packaging structural capable of preventing electrostatic damaged and manufacturing method therefor

Abstract

The invention relates to illuminator encapsulation structure which can avoid the destroy of static and manufacturing method, it at least includes a illuminator which is set on at least two metal material loading bases which possess high conductive and high heat-conducting coefficient, the two loading bases are separately connected with the positive and negative pole, wafer type static protecting subassembly is glued between the two loading bases, so the illuminator can possesses best radiating path under high power, and the damage caused by static projecting wave to illuminator can be prevented.

Description

technical field [0001] The present invention relates to a light emitting device packaging structure that can prevent electrostatic damage, in particular to a packaging technology applied to high-power light-emitting diode point light sources or high-power light-emitting diode light source modules. The antistatic components contained in it can be respectively Applied to a single package structure, polycrystalline series structure or polycrystalline parallel structure, in addition to having the function of electrostatic protection, it also has a low thermal resistance value and excellent heat dissipation capability. Background technique [0002] Since the 1960s, light-emitting diodes (LEDs, Light Emitting Diodes) made of gallium arsenide (GaAs) and aluminum gallium indium phosphide (AlGaInP) have obtained red to yellow-green wavelengths in the form of electroluminescence. In recent years, due to the breakthrough of gallium nitride (GaN) materials in epitaxy technology, blue an...

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Problems solved by technology

[0010] 3. The solder balls 307 and 308 should not be too large, otherwise it will easily cause a short circuit between the P pole 321 and the N pole 320 of the Zener diode 302;

[0011] 4. Using a silicon diode whose thickness cannot be reduced as a carrier substrate, the heat dissipation effect is not ideal, and it is still not as low as the thermal resistance of a metal material

[0014] 1. If the light-emitting diode is electrically connected to the outside by front-side bonding, the heat dissipation path must pass through the thermally conductive low-fat sapphire substrate, and the thermal resistance cannot be reduced

[0015] 2. If the wires and line pads are located in the light emitting direction of the LED, it will hinder the output beam, reduce the light emitting area, and reduce the brightness

[0016] 3. The thermal resistance of the traditional lead frame package structure is too large, and a bearing base with a larger area and thinner thickness must be used to reduce the thermal resistance

[0017] 4. If the Zener diode is used as the bearing base, the thickness will be limited due to the concerns of silver glue overflowing, and it cannot be very thin

[0018] Silicon is used as the heat dissipation base, although its heat dissipation efficiency is better, but for high-power light-emitting diode packaging structures, its thermal resistance is still not as good as that of metal materials

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