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Method for preparing CeO2 buffer layer on substrate of metal in cube texture

A cubic texture, metal substrate technology, applied in the direction of metal material coating process, coating, ion implantation plating, etc., can solve the problems of long time, difficult to suppress NiO, low sputtering rate, etc., to ensure integrity , The effect of suppressing the formation of NiO and improving the sputtering efficiency

Active Publication Date: 2007-10-10
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the sputtering rate is low and takes a long time
In order to improve the sputtering efficiency, reactive sputtering can also be used, that is, the metal Ce is used as the target material, and the Ar / O 2 Sputtering deposition under the atmosphere, although it improves the sputtering efficiency, it is difficult to suppress the formation of NiO, which will make the epitaxial orientation of the film worse

Method used

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  • Method for preparing CeO2 buffer layer on substrate of metal in cube texture
  • Method for preparing CeO2 buffer layer on substrate of metal in cube texture
  • Method for preparing CeO2 buffer layer on substrate of metal in cube texture

Examples

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preparation example Construction

[0027] As shown in Figure 1, the reactive sputtering equipment used in the present invention is in a vacuum chamber, with a sputtering target 1 and a heater 2, the sputtering target 1 and the heater 2 are arranged oppositely, and the sputtering target 1 front is provided with Movable baffle 3; an inlet of sputtering gas is provided on the closed cavity, and the inlet of the sputtering gas is connected to the mixing chamber 4 through the inlet pipeline; the mixing chamber 4 is respectively connected to the argon (Ar) gas inlet pipe Road, H 2 Intake pipeline, O 2 Intake pipeline, and in the argon (Ar) gas intake pipeline, H 2 Intake pipeline, O 2 Mass flowmeters 5, 15, 25, and stop valves 6, 16, 26 are respectively installed on the air intake pipeline; a vacuum pipeline interface is provided on the closed cavity, and the vacuum pipeline interface is connected to the vacuum pipeline, and the ram is connected in series on the vacuum pipeline. valve 7, molecular pump 8, mechanic...

Embodiment 1

[0038] Preparation of CeO by Reactive Sputtering 2 For the buffer layer, the target material is a Φ64×4mm pure metal Ce (99.9%) target, and the distance between the target and the base is about 30mm.

[0039] Cut the Ni metal strip with a cubic texture (the (111) pole figure of the Ni baseband is shown in Figure 2, and the scanning electron microscope image is shown in Figure 3), and cut it into a sample with a size of 3mm×10mm, and put it in alcohol Ultrasonic cleaning was performed for 2 minutes, followed by ultrasonic cleaning in acetone for 3 minutes.

[0040] Put the prepared Ni base tape on the heater of the equipment (the equipment is shown in Figure 1), and vacuumize to 1×10 -2 Pa, followed by Ar / H 2 (60 / 10) mixed gas, adjust the air pressure to 13Pa, raise the heater temperature to 650°C within 5 to 10 minutes, balance for about 5 minutes, turn on the sputtering power, slowly increase the sputtering power to 80W, and balance After about 10 minutes, remove the baffl...

Embodiment 2

[0045] Preparation of CeO by Reactive Sputtering 2 For the buffer layer, the target material is a Φ64×4mm pure metal Ce (99.9%) target, and the distance between the target and the base is about 30mm.

[0046] Cut the Ni metal strip with a cubic texture (the (111) pole figure of the Ni baseband is shown in Figure 2, and the scanning electron microscope image is shown in Figure 3), and cut it into a sample with a size of 10mm×10mm, and put it in alcohol Ultrasonic cleaning was performed for 2 minutes, followed by ultrasonic cleaning in acetone for 3 minutes.

[0047] Put the prepared Ni base tape on the heater of the device (the device is shown in Figure 1), and then evacuate to 1×10 -2 Pa, followed by Ar / H 2 (60 / 10) mixed gas, and adjust the air pressure to 26Pa, raise the heater temperature to 680°C within 5 to 10 minutes, balance for about 5 minutes, turn on the sputtering, slowly increase the sputtering power to 80W, and balance for about After 10 minutes, remove the baff...

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Abstract

This invention discloses a method for preparing CeO2 buffer layer on a cubic-textured metal substrate. The method comprises: (1) washing cubic-textured Ni or Ni alloy belt substrate, and drying; (2) sputtering Ni or Ni alloy substrate with Ce as the target at 500-780 deg.C and 5-80 Pa in Ar / H2 atmosphere for 5-30 min; (3) sputtering Ni or Ni alloy substrate with Ce as the target at 500-780 deg.C and 5-80 Pa in Ar / O2 atmosphere for 25-150 min to obtain a CeO2 buffer layer. The volume ratio of Ar to H2 is (50-80):10. The volume ratio of Ar to O2 is 50:2-80:1. The method can effectively inhibit the formation of NiO, and ensure uniform orientation of CeO2.

Description

technical field [0001] The invention relates to a method for preparing CeO on a cubic textured metal substrate 2 The buffer layer method is a thin film preparation method. The invention belongs to the technical field of preparation of YBCO coated conductor buffer layer and reactive sputtering. Background technique [0002] The preparation of high-quality YBCO-coated conductors is the key to the practical application of high-temperature superconducting tapes. The YBCO coated conductor mainly includes three parts: cubic texture metal substrate (cubic texture metal nickel or nickel alloy in the present invention), one or more buffer layers, and YBCO superconducting layer. The main function of the buffer layer is to transfer the texture of the metal substrate to the YBCO superconducting layer, prevent the interdiffusion reaction between the Ni or Ni alloy substrate and YBCO, and prevent the oxidation of the substrate to generate (111)-oriented NiO. Therefore, the selection of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/34C23C14/56C23G5/024
Inventor 张华杨坚刘慧舟
Owner GRIMAT ENG INST CO LTD
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