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Apparatus for film formation and method for film formation

A film-forming device and film-forming chamber technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of free radical deactivation and inability to form, and achieve the goal of preventing deactivation and high-efficiency reaction Effect

Inactive Publication Date: 2007-10-10
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] In this way, in the prior art, free radicals are deactivated during transport, and a sufficient amount of free radicals required to react with the raw material gas cannot reach the substrate and cannot form the desired film

Method used

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  • Apparatus for film formation and method for film formation
  • Apparatus for film formation and method for film formation
  • Apparatus for film formation and method for film formation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] Using the film forming apparatus shown in FIG. 9 , the transport efficiency of radicals when the size of the opening 47 was changed was observed. In this film forming apparatus, a partition member 51 is provided in the opening 47 . By changing the size of the partition member 51 and thereby changing the size of the opening 47, the shortest distance straight line between the peripheral edge of the substrate S and the peripheral edge of the opening 47 and the intersection point of the catalytic source 48 and the edge of the catalytic source can be adjusted. The distance y changes. The refractory metal wire 81 constituting the catalyst source 48 is made of tungsten, and its length z is 100 mm. In FIG. 9, the same components as those in FIG. 4 are denoted by the same symbols.

[0083] By changing the size of the partition member 51 of the device having the above-mentioned structure, and changing the distance y from the catalyst source to 0, 35, 40, and 45 mm, in each case...

Embodiment 2

[0089] The transport efficiency of radicals was observed using the film forming apparatus shown in FIG. 4 without the shower nozzle 443 . In the present film forming apparatus, the diameter of the opening 47 coincides with the inner diameter of the catalyst chamber 46 . As the substrate S, an 8-inch wafer on which a thermal oxide film was formed and a copper oxide film was formed was used, and this substrate S was placed on the substrate mounting table 441 . The angle ω between the shortest distance straight line between the peripheral portion of the substrate S and the peripheral portion of the opening 47 and the substrate is about 80 degrees.

[0090] The structure of the catalytic source 48 is that eight high-melting-point metal wires 81 made of tungsten with a wire diameter of 0.5 mm and a length of 350 mm are arranged in a regular octagon as shown in FIG. 4 high-melting-point metal wires 81 with a diameter of 0.5 mm and a length of 300 mm are arranged in a regular quadri...

Embodiment 3

[0095] Using the film formation device shown in Figure 4, TaN x Formation of the film, evaluation of the properties of the film. As the substrate S, the same 8-inch wafer as in Example 1 was used.

[0096] Firstly, the substrate S is sent into the film forming chamber 44 and placed on the substrate mounting table 441 . The temperature of the substrate mounting table 441 was set to 250°C. In the state where the substrate temperature is stabilized, N as a purge gas 2 Gas is introduced into the catalytic chamber 46 at 200 sccm.

[0097] Five seconds after the introduction of the purge gas, TIMATA as a source gas was introduced through the shower nozzle 443 at a rate of 0.5 g / min.

[0098] After the precursor of the source gas is adsorbed on the substrate S, the introduction of the source gas is stopped.

[0099] The introduction of the purge gas introduced from the catalyst chamber 44 is stopped several seconds after the introduction of the source gas is stopped.

[0100] N...

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Abstract

In a vacuum chamber (42) comprising a catalyst chamber (46) provided with a catalyst source (48) provided so as to face a film forming chamber (44) and a substrate (S), the film forming chamber (44) is connected to the catalyst chamber (46) through an opening part (47). The catalyst source is disposed at a position satisfying a requirement of = wherein represents the angle that a straight line, which shortestly connects the peripheral part of the substrate mounted within the film forming chamber to the peripheral part of the opening part, makes with the substrate; and represents the angle that a straight line, which shortestly connects the peripheral part of the substrate to the edge part of the catalyst source makes with the substrate. The use of this film forming apparatus can realize the formation of a desired film while preventing deactivation of radicals generated in the catalyst source and thus efficiently carrying out a reaction of a starting gas with radicals.

Description

technical field [0001] The invention relates to a film forming device and a film forming method. Background technique [0002] In recent years, an ALD (Atomic Layer Deposition) method has attracted attention as a film-forming technique in the field of semiconductor device manufacturing. [0003] Usually, in the ALD method, after the raw material gas is introduced into the vacuum chamber, the atomic layer unit (atomic layer unit) Adsorb the precursor of the raw material gas on the surface of the substrate (adsorption step), introduce the reaction gas in this state, and react the precursor and the reaction gas on the substrate surface (reaction step), to form a desired film. The step of adsorbing the precursor and the step of reacting the adsorbed precursor with the reaction gas are repeated multiple times to form a film with a desired thickness. [0004] In the ALD method, the above-mentioned reaction gas is a general source gas, radicals generated by plasma decomposition,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/452C23C16/44
CPCC23C16/34C23C16/44C23C16/452C23C16/52
Inventor 五户成史原田雅通加藤伸幸
Owner ULVAC INC
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