Unlock instant, AI-driven research and patent intelligence for your innovation.

Light shield plasma etching method using protective cover

An etching and photomask technology, which is applied in the field of plasma etching chromium, can solve the problems of uneven etching characteristics of the mask, critical dimensions that cannot be accurately transferred, and cannot be produced.

Inactive Publication Date: 2014-04-30
APPLIED MATERIALS INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the photoresist is impacted during the chrome etch process, the critical dimensions of the patterned photoresist cannot be accurately transferred to the chrome layer
Therefore, conventional chromium etch processes do not yield acceptable performance for masks with critical dimensions less than about 5 microns
The result is non-uniformity in the mask etched features and in turn reduces the ability to use the mask to fabricate device features with small critical dimensions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light shield plasma etching method using protective cover
  • Light shield plasma etching method using protective cover
  • Light shield plasma etching method using protective cover

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] figure 1 A schematic cross-sectional view of an etching process reaction chamber 100 according to an embodiment is shown, in which the quartz etching method of the present invention can be used. Suitable reactors disclosed herein for use include, for example, discrete plasma sources (DPS ) II reactor, or Tetra I and Tetra II photomask etch systems, all of which are available from Applied Material, Inc., located in Santa Monica, California. The etching process reaction chamber 100 can also be used as Figure 6 The process module of the process system 170 shown is, for example, the Centura ® available from Applied Materials. Integrated semiconductor wafer process system. The processing system may also include a first reaction chamber 172 suitable for an ashing process and a second reaction chamber 174 suitable for polymer deposition. Examples of suitable ashing and deposition chambers include AXIOM HT TM and Tetra II process chambers, which are also commercially av...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a process for etching chromium layer and forming light shield. According to an embodiment, the process for etching chromium comprises the following steps: providing film stacking at manufacture process reaction chamber; patterning the light blockage layer at the film stacking; depositing angle shaped antiabrasion layer at the light blockage layer having patterns; etching the angle shaped antiabrasion layer to expose the chromium layer through the light blockage layer having patterns; and etching the chromium layer. Said process for etching chromium layer in accordance with the present invention is especially suitable to light shield making.

Description

technical field [0001] Embodiments of the present invention relate to a method for plasma etching chromium, and in particular to a method for etching a chromium layer in the process of making a photomask. Background technique [0002] When fabricating an integrated circuit (IC) or wafer, the patterns representing the different layers of the wafer are created by the wafer designer. A series of reusable masks or reticles are created from these patterns to transfer the design of each wafer layer to the semiconductor substrate during the manufacturing process. Mask patterning systems use precise laser or electron beams to transfer an image of each wafer design onto an opposing mask. The purpose of the mask is very similar to that of a photographic film to transfer the circuit pattern of each layer onto the semiconductor substrate. These layers are created using a continuous process and converted into the tiny transistors and electronic circuits that comprise each complete chip...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23F4/00G03F1/80H01L21/3213H01L21/3065G03F1/26
Inventor M·钱德拉楚得A·库玛W·-F·亚
Owner APPLIED MATERIALS INC