Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dual-purpose copy arrangement for ultraviolet lighting micro-nano graph air pressure stamping and photolithography

A copying device and ultraviolet light technology, which are applied in microlithography exposure equipment, photolithographic process exposure devices, patterned surface photolithographic process, etc. Effect

Active Publication Date: 2007-10-31
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF0 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem of the present invention is: to overcome the deficiencies of the prior art, and to provide a dual-purpose duplication device for pressure imprinting and photolithography of micro-nano patterns under ultraviolet light, which is convenient in pressure control and high in precision, and can overcome The substrate is not flat, which brings about the problem of poor quality of imprinted graphics, and it is easy to operate and use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dual-purpose copy arrangement for ultraviolet lighting micro-nano graph air pressure stamping and photolithography
  • Dual-purpose copy arrangement for ultraviolet lighting micro-nano graph air pressure stamping and photolithography
  • Dual-purpose copy arrangement for ultraviolet lighting micro-nano graph air pressure stamping and photolithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] As shown in Figure 1, it is the front view of the structure of the dual-purpose replication device structure of ultraviolet light micro-nano pattern air pressure embossing and photolithography of the present invention, which includes a large substrate of the host machine 1, a stamper mobile station system 2, a uniform lighting system 3, and a stamper Frame 4, stamper 5 or mask 5', substrate 6 or silicon wafer 6', alignment system 7, illumination uniformity detection system 8 and control system 9, the host large substrate 1 is placed The vibration isolation table and the control cabinet 14 of the vibration isolation function make the host of the present invention not be affected by the vibration of the external environment when embossing or photolithography is carried out. On the large base plate 1 of the host computer, a stamper mobile system 2 and an illumination uniformity detection system 8 are respectively fixed, wherein the illumination uniformity detection system 8...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

This invention relates to one ultraviolet nanometer gas pressure and etching copy device, which comprises the following parts: host large baseboard, pressure mobile bench system, even light system, pressure mode rack, mode and base slice and calibration system, lift system, load adjust bench system, prism lens and control system, wherein the host baseboard is fixed with pressure mode mobile bench system and other load adjust bench system; the XY pressure mode mobile bench is supported with pressure rack and prism lens added with pressure mask or mask film; the base slice or silicon slice are added onto adjust platform on pressure mode; the calibration system is connected to the one side of light system; the work bench system and light system output signals are output to control system.

Description

technical field [0001] The invention relates to a dual-purpose replication device for micro-nano pattern imprinting and photolithography dual-purpose duplication under ultraviolet light, and belongs to the technical field of micro-nano pattern imprinting and photolithography replication. Background technique [0002] With the rapid development of high-tech information technology, methods of making micro-nano graphics by lithography, such as deep ultraviolet lithography, extreme ultraviolet lithography, X-ray lithography, ion beam projection lithography, and electron beam lithography, etc. The method of nanograph structure can no longer meet the needs. Moreover, these methods all require an electromagnetic radiation system and an optical system of an extremely short-wavelength light source, which are technically very complicated, and the investment is also very expensive. [0003] In recent years, a new technology with simple operation, high resolution, and large-scale impri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/20H01L21/027H01L21/00
Inventor 陈旭南罗先刚胡承刚
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com