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GaN-based vertical LED power chip with current extending layer and barrier and its production

A technology of current expansion layer and power chip, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., and can solve the problems of large thermal resistance of LED chips, inability to make full use of light-emitting layer materials, and low heat dissipation efficiency

Inactive Publication Date: 2007-11-21
AQUALITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The two electrodes of the LED are on the same side of the GaN epitaxial layer, which faces the problems of current crowding, uneven current distribution and inability to fully utilize the light-emitting layer material
In addition, the thermal conductivity of the sapphire substrate is low, and the LED chip with this structure has a large thermal resistance
Therefore, high-power GaN-based LEDs urgently need to solve the following problems: (1) low heat dissipation efficiency; (2) high cost; (3) light extraction efficiency and luminous power still need to be improved

Method used

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  • GaN-based vertical LED power chip with current extending layer and barrier and its production
  • GaN-based vertical LED power chip with current extending layer and barrier and its production
  • GaN-based vertical LED power chip with current extending layer and barrier and its production

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Embodiment Construction

[0008] As shown in Figure 1, the GaN-based vertical LED power chip with a current spreading layer and a blocking layer of the present invention is composed of a first electrode, a current spreading layer, a GaN-based LED epitaxial light-emitting layer, a current blocking layer and a second electrode;

[0009] The GaN epitaxial layer includes an N-GaN layer, a light emitting layer and a P-GaN layer.

[0010] For general high-power flip-chip components, the two electrodes are on the same side of the GaN epitaxial layer / sapphire growth substrate. Due to the high resistivity of the P-GaN layer, the current cannot be distributed uniformly and most of the current will be confined under its electrodes. In addition, current congestion occurs when current flows downward through the P-type layer and then to the light-emitting layer to generate light, and then passes through the N-type layer and is localized around the N electrode.

[0011] The GaN high-power flip-chip structure with a ...

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Abstract

A process method of a vertical LED chip with a current expending and blocking layer on GaN base includes: forming a metal (gold, indium, tedium) layer on a sapphirine underlay; forming an intermediate layer and GaN expending layer on the metal layer; forming current expending layer and the secondary electrode on the P-GaN layer of GaN expending layer; heat to melt the metal layer to separate the underlay and the LED on GaN base; forming a premier electrode on the removing layer.

Description

technical field [0001] The invention relates to a manufacturing process method of a semiconductor device, in particular to a preparation method of a GaN-based vertical LED power chip with a current spreading layer and a blocking layer. Background technique [0002] High-power, high-brightness light-emitting diodes (LEDs) have great promise to replace incandescent lamps. Its appearance has greatly expanded the application of LEDs in various signal display and lighting source fields. Particularly representative applications are automotive lights and traffic lights. Power-type white light LEDs have begun to be used in reading lights in cars and airplanes, and are increasingly used in portable lighting sources such as key lights, flashlights, and miners' lights. In addition, power LEDs are more and more widely used in building decorative light sources, stage lighting, shopping mall windows, garden lawn lighting, etc. Using ultra-high-brightness power red, green, and blue thre...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/14
Inventor 董志江靳彩霞黄素梅姚雨
Owner AQUALITE CO LTD
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