Method of accelerating hot carrier injection investigating

Abstract

A method for speeding up test of hot carrier injection includes separately measuring curve of drain electrode current and substrate current to time under different temperature and different bias voltage, setting failure condition and naming time realizing said failure condition to be failure time (FT), plotting out product of FT and drain electrode saturated current (DESC) and quotient of substrate current and DESC to obtain their relation, plotting out FT and temperature to obtain their relation and making low temperature failure test to derive out FT at the other temperature according to said relation of FT and temperature.

Description

Technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to an accelerated hot carrier injection test for predicting the DC lifetime of a hot carrier MOS (Metal Oxide Semiconductor). Background technique [0002] At present, for the ultra-large-scale integrated circuit manufacturing industry, with the continuous reduction of the size of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices, it has now been reduced to sub-micron and deep sub-micron, and is developing to ultra-deep sub-micron. While the size of the MOS device is proportionally reduced, the operating voltage of the device is not proportionally reduced, which greatly increases the formation probability of channel hot carriers, and generates interface states at the silicon-silicon dioxide interface, or is blocked by the gate. Charge trapping in the oxide layer leads to increased degradation of device characteristics such as threshold voltage, transco...

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Problems solved by technology

[0007] It can be seen that in the device failure experiment of hot carrier injection under accelerated stress conditions, the acceleration speed is still limited due to the limitation of the drain-source stress voltage selection, and the failure experiment cannot be performed efficiently.

[0008] The current hot carrier injection test is always tested at room temperature to predict the lifetime, which takes a long time to test the MOS field effect device to obtain the result

This increases costs by wasting machine testing time and delaying data analysis time

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