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Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles

A technology of sputtering and molding, which is applied in the fields of forming high-purity metal bodies, sputtering reactor components, sputtering target structures, and forming sputtering targets, and can solve problems such as the difficulty of forming three-dimensional targets with small grain sizes.

Inactive Publication Date: 2008-01-23
HONEYWELL INT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conversely, it has proven difficult to form 3D targets with small grain sizes

Method used

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  • Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
  • Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
  • Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles

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Embodiment Construction

[0045] In one aspect, the invention provides a method of forming a metal body having a grain size of less than 250 microns, more preferably less than 200 microns, most preferably less than 100 microns. This embodiment will be described with reference to FIGS. 10 to 15 . Referring initially to FIG. 10 , an ingot 20 of metallic material is shown. Metal ingot 20 may comprise a cast ingot in certain embodiments. Exemplary compositions of metal ingot 20 are one or more of copper, nickel, cobalt, tantalum, aluminum, and titanium, with one suitable material being copper having a purity of at least 99.995% by weight. Metallic materials may include alloys consisting of one or more of copper, nickel, cobalt, tantalum, aluminum, and titanium, such as titanium / germanium alloys having a purity of at least 99.9995% by weight. Metal ingot 20 is substantially cylindrical, having a diameter D and a thickness T. The thickness T may be regarded as the original thickness of the metal ingot 20 ...

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Abstract

The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.

Description

[0001] Related Patent Applications [0002] This application claims priority to PCT Application No. PCT / US01 / 45650, filed October 9, 2001, which claims priority to U.S. Provisional Application No. 60 / 306,836, filed July 19, 2001 right. technical field [0003] The present invention relates to a method of forming an ingot and also to a method of forming a body of high purity metal. Furthermore, the present invention relates to a method of forming a sputtering target and a structure of a sputtering target. In addition, the present invention also relates to sputtering reactor assemblies. In particular, the present invention relates to sputtering target structures which consist essentially of, or consist of, non-magnetic materials. Background technique [0004] Physical vapor deposition (PVD) is a common method used in semiconductor processing to form thin layers of materials. PVD includes a sputtering process. In the PVD processing example, the cathode target is exposed t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06C23C14/54B22D21/00B21J5/00B21J5/02B21J13/02B21K21/00B21K23/00B22D7/00B22D27/08C22F1/00C22F1/08C23C14/35H01J37/34
CPCB22D7/00H01J37/3408B21J5/00B21J5/02C22F1/00C22F1/08B21K21/00H01J37/3423C23C14/3407B22D27/08C23C14/3414
Inventor C·T·吴W·易F·B·希登
Owner HONEYWELL INT INC