Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure and structure of non-volatility memory and manufacturing method therefor

A non-volatile, manufacturing method technology, applied in the field of non-volatile memory structure, semiconductor structure and non-volatile memory manufacturing, can solve the problem of memory yield and reliability decline, damage to memory film layers, insufficient etching margin And other issues

Inactive Publication Date: 2008-02-06
POWERCHIP SEMICON CORP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the manufacturing process of this kind of trench non-volatile memory, multiple etching steps (etch back, dry etching, wet etching, etc.) are used, and it is easy to destroy the memory due to insufficient etching margin of the process. Part of the film layer, resulting in a decline in the yield and reliability of the memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and structure of non-volatility memory and manufacturing method therefor
  • Semiconductor structure and structure of non-volatility memory and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] 1A to 1D are cross-sectional views showing a manufacturing process of a non-volatile memory according to an embodiment of the present invention.

[0048] Referring to FIG. 1A , the method firstly provides a substrate 100 , such as a silicon substrate. A mask layer 110 has been formed on the substrate 100. The material of the mask layer 110 is, for example, silicon nitride, silicon carbide or silicon carbonitride, and its formation method is, for example, chemical vapor deposition. For example, a pad layer 105 is disposed between the mask layer 110 and the substrate 100 , and the pad layer 105 is, for example, formed during the manufacturing process of the isolation structure (not shown).

[0049] Trenches 113 are formed in the mask layer 110 and the substrate 100 . The trench 113 is formed by, for example, removing part of the mask layer 110 and part of the substrate 100 by means of photolithography, and the removal method is, for example, dry etching. Then, a tunnel ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A manufacturing method for semi-conductor structure is applicable to non-volatility memory technology. Firstly, a substrate is provided, inside the substrate, grooves are formed, and on the side walls of the grooves, floating grids are formed. Secondly, the conductor material layers are formed in the grooves, and the surface active technology is performed on the conductor material layers, thirdly, protective layers are formed on the conductor material layers, the surface active technology quickens the forming speed of the protective layers.

Description

technical field [0001] The invention relates to an integrated circuit structure and a manufacturing method thereof, in particular to a semiconductor structure, a manufacturing method of a non-volatile memory, and a structure of the non-volatile memory. Background technique [0002] Among various non-volatile memory products, the electrically erasable and programmable non-volatile memory has the ability to store, read, and erase data multiple times, and has the stored data after power off. Electrically Erasable and Programmable Read-Only Memory (EEPROM), which has the advantage of not disappearing, has become a memory element widely used in personal computers and electronic equipment. [0003] A typical electrically erasable and programmable non-volatile memory is made of doped polysilicon (floating gate) and control gate (control gate), which are stacked on the substrate from bottom to top , and separated by an inter-gate dielectric layer. [0004] However, with the vigoro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/8247H01L29/788H01L27/115H10B69/00
Inventor 陈大川叶展玮许汉杰
Owner POWERCHIP SEMICON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com