Method for driving light-emitting diode, and light-emitting diode

一种发光二极管、发光层的技术，应用在光学通信设备,驱动适于下述应用的发光二极管领域，能够解决没有公开或建议发光二极管电流密度依赖性等问题

Inactive Publication Date: 2008-02-13
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this publication does not disclose or suggest the current density dependence of the emission wavelength of light-emitting diodes or describe the advantages applied to displays.

Method used

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  • Method for driving light-emitting diode, and light-emitting diode
  • Method for driving light-emitting diode, and light-emitting diode
  • Method for driving light-emitting diode, and light-emitting diode

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Embodiment Construction

[0055] Embodiments of the present invention will now be described with reference to the accompanying drawings.

[0056] A first embodiment of the present invention will be described.

[0057] FIG. 1 illustrates a GaN-based light emitting diode according to a first embodiment.

[0058] In FIG. 1 , a GaN-based light emitting diode includes an n-type layer 12 , a p-type layer 13 , and a light-emitting layer 11 disposed between the n-type layer 12 and the p-type layer 13 . The light emitting layer 11 has a quantum well structure containing indium. Each of the n-type layer 12, the p-type layer 13, and the light-emitting layer 11 includes a GaN-based compound semiconductor crystal having a wurtzite structure and has a main surface inclined at an angle θ with respect to the c-plane, the angle θ being 0.25 ° to 2° and preferably, for example, 0.3° to 1°. Although not shown, the n-type electrode and the p-type electrode are arranged in ohmic contact with the n-type layer 12 and the ...

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PUM

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Abstract

The present invention discloses a method for driving a light-emitting diode, which includes the step of adjusting the brightness of the light-emitting diode with a current density in the range equal to or less than 20A / cm2. A light emitting diode includes a p-type layer, an n-type layer, and a light-emitting layer, which is arranged between the p-type layer and the n-type layer and has an indium-containing quantum well structure. Each of the p-type layer, the n-type layer and the light emitting layer includes a nitrogen-based group III-V compound semiconductor crystal having a wurtzite structure. The light emitting layer has a main surface inclined at an angle of 0.25° to 2° with respect to the c-plane.

Description

technical field [0001] The invention relates to a method for driving a light emitting diode, a light emitting diode, a method for driving a display, a display, a method for driving an electronic device, an electronic device, a method for driving an optical communication device, and an optical communication device. In particular, the invention relates to methods for driving light emitting diodes suitable for applications such as various displays comprising InGaN / GaN based light emitting diodes. Background technique [0002] InGaN / GaN-based light emitting diodes, especially the InGaN / GaN-based light emitting diodes having emission wavelengths within the visible region, the emission wavelength (color) of which can vary with the driving current density. For example, Japanese Unexamined Patent Application Publication No. 2002-237619 proposes a method of driving light emitting diodes to achieve polychromatic light emission using this phenomenon. [0003] However, such light emitt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H05B37/02G09G3/20G09G3/32G09G3/34G09G3/36H01L33/06H01L33/24H01L33/32H05B44/00
CPCH01L33/32G09G2320/0233H04N9/3155G09G2320/0626H05B33/0857G09G3/3225H01L33/16G09G3/3216H05B45/20
Inventor 琵琶刚志
Owner SONY CORP
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