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A Photolithography Method Based on Metal Localization Effect

A localized and photolithographic technology, applied in the process of producing decorative surface effects, metal material coating process, optics, etc., to achieve the effect of high production efficiency and simple production process

Active Publication Date: 2011-11-30
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved in the present invention is to provide a photolithographic method based on the metal localization effect in view of the existing problems in the prior art when processing structures with a characteristic size smaller than 50nm, and to use this method to prepare a structure with a characteristic size smaller than 50nm. structure, and the manufacturing process is simple, no complicated equipment is required, and the manufacturing efficiency is high

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  • A Photolithography Method Based on Metal Localization Effect
  • A Photolithography Method Based on Metal Localization Effect
  • A Photolithography Method Based on Metal Localization Effect

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Embodiment

[0028] Concrete steps of the present invention are as follows:

[0029] (1) At first adopt traditional projection or near, contact photolithography method, make metal silver micron-scale structure 2 on the surface of K9 glass 1, as figure 1 shown;

[0030] (2) Pour the PDMS prepolymer onto the surface of the metallic silver micron-scale structure 2, and solidify it in a high-temperature environment of 60°C for 2 hours, take it out and cool it, and remove the solidified PDMS film 3 and the metallic silver micron-scale structure 2 from the The surface of K9 glass 1 is raised, and the metallic silver micron-scale structure 2 will be embedded in the PDMS material to form a localized photolithography mask, such as figure 2 shown;

[0031] (3) For the visible light band, select a quartz material as the substrate 5, and coat the AZ3100 photoresist 4 on the surface of the substrate, and the thickness of the photoresist 4 is 100nm;

[0032] (4) The PDMS localized photolithography m...

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Abstract

A photolithography method based on the metal localization effect: (1) first fabricate a metal structure on the glass surface; (2) pour the PDMS prepolymer on the surface of the metal structure and cure it in a high temperature environment of 30°C-90°C After taking it out and cooling, lift the solidified PDMS film and metal structure from the glass surface, and the metal structure will be nested in the PDMS material to form a localized photolithography mask; (3) select the substrate material, and coat the substrate surface with Covering with photoresist; (4) closely bonding the PDMS localization photoresist mask to the photoresist on the surface of the substrate; (5) irradiating the photoresist mask with vertical incident light, and removing the PDMS template after the exposure is completed; (6) Developing the photoresist to finally form required photoresist lines. The invention can prepare a structure with a characteristic size smaller than 50nm, and the manufacturing process is simple, no complicated equipment is needed, and the manufacturing efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of micro-nano structure processing, in particular to a photolithography method based on the metal localization effect. Background technique [0002] In recent years, with the rapid development of micro-nano processing technology and nanomaterials, the electromagnetic properties of micro-nano metal structures are receiving more and more attention. The interaction of light with surface micro-nano metal structures produces a series of new and exotic physical phenomena. For example, in 1998, French scientist Ebbesen and his collaborators discovered the phenomenon of extraordinary enhancement (Extraordinary Optical Transmission) of light passing through a subwavelength metal hole array. The research of H.J.Lezec et al. further showed that: when the light passes through the sub-wavelength metal nanohole, its transmittance can not only be enhanced, but also the diffraction angle of the beam is very small, and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00B81C1/00
Inventor 罗先刚董小春杜春雷魏兴战邓启凌
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI