Semiconductor device manufacturing method

Abstract

A method includes forming an etching mask having a predetermined circuit pattern on an Si-containing low dielectric constant film disposed on a semiconductor substrate; performing etching on the Si-containing low dielectric constant film through the etching mask by use of an F-containing gas, thereby forming a groove or hole; performing ashing by use of NH3 gas after said etching, thereby removing the etching mask; removing a by-product generated during said ashing; and then supplying a predetermined recovery gas, thereby recovering damage of the Si-containing low dielectric constant film caused before or in said removing the etching mask.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device formed by, for example, a single damascene method or a dual damascene method. Background technique [0002] In the manufacturing process of semiconductor devices, the double damascene method is often used to form wiring trenches and contact holes (for example, refer to Patent Document 1). FIG. 13 is an explanatory diagram schematically showing an example of a conventional method of forming Cu wiring by a double damascene method. [0003] First, on the substrate, for example, a wiring layer 500, an interlayer insulating film 501, and an anti-reflection film 502 are formed sequentially from below, and a first resist film 503 is formed on the surface of the multilayer film structure (FIG. 13(a). )). Next, the first resist film 503 is patterned into a predetermined pattern by photolithography ( FIG. 13( b )). In this patterning step, the first resist film 503 is exposed in...

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Problems solved by technology

[0008] However, as an interlayer insulating film (Low-k film) made of a Low-k material, an interlayer insulating film containing Si in its skeleton is often used, and when etching such a Low-k film containing Si, a CF 4 gas containing F, but when removing the resist film as an etching mask afterward, when using NH 3 In the case of a gas, there will be a new problem that the damage cannot be recovered even if the silylation treatment is performed thereafter

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