Method for measuring intra-cavity loss of LD pumping solid state laser device and equipment using the method

A solid-state laser, internal loss technology, applied in the field of lasers, can solve the problems of difficulty in guaranteeing reliability, affecting laser operation and laser output, complex structure, etc., to achieve the effect of non-interference measurement

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Problems solved by technology

However, the luminescent center particles in the solid laser medium have rich energy levels and complex structures; after being excited by the pumping source, in addition to the excitation of the lower energy level particles and the radiative transition of the upper energy level particles, there are other transition processes, which occur as usual Nonradiative relaxation and upconversion luminescence in rare earth ion-doped laser media
Under the pumping conditions of LD high pumping power density, these transition processes bring additional loss, which significantly affects the operation of the laser and the laser output
Considering only the laser generation process of solid-state lasers and including the influence of other transition processes into the cavity loss, the reliability of the measurement and calculation results will be difficult to guarantee

Method used

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  • Method for measuring intra-cavity loss of LD pumping solid state laser device and equipment using the method
  • Method for measuring intra-cavity loss of LD pumping solid state laser device and equipment using the method
  • Method for measuring intra-cavity loss of LD pumping solid state laser device and equipment using the method

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Embodiment 1

[0037] Embodiment 1: As shown in FIG. 1 , the implementation device of the present invention includes a pumping semiconductor laser 1 , a pump coupling system 2 , a laser medium 3 , a laser flat resonator 4 , a 975nm filter 5 , and a power meter 6 . The pumping light output by the pumping semiconductor laser 1 with a wavelength of 975nm passes through the pumping coupling system 2 and is coupled at the laser medium 3 into a circular light spot with a fundamental mode Gaussian distribution with a radius of 75 μm. The laser medium 3 is an erbium-ytterbium co-doped phosphate glass microchip with a thickness of 1 mm, and the concentration of erbium ions is N e 9.88×10 25 / cm 3 , Ytterbium ion concentration N Y 2.01×10 27 / cm 3 . The stimulated radiation of the laser medium 3 produces light with a wavelength of 1540nm, which is output as laser light after oscillating in the laser resonator cavity 4 . In this example, the total reflection mirror of the resonator cavity of the ...

Embodiment 2

[0062] Embodiment 2: this embodiment is basically the same as Embodiment 1, and the difference is as shown in part 4 among Fig. 4, and the radius of curvature of the output mirror of the microchip laser cavity is 214mm, and the reflectivity is 99%, which is the same as that plated on the laser medium The 1540nm high-reflection film constitutes a flat-concave cavity, and its energy level and rate equation analysis are the same as those in Example 1. In the case of cavity lengths of 4.5, 5.5, and 6.5 mm, the round-trip losses in the flat-concave cavity are 0.0048, 0.0056, and 0.0059, respectively.

Embodiment 3

[0063] Embodiment 3: As shown in FIG. 5 , the implementation device of the present invention includes a pumping semiconductor laser 1 , a pumping coupling system 2 , a laser medium 3 , a 975nm filter 4 , and a power meter 5 . The pumping light output by the pumping semiconductor laser 1 with a wavelength of 975nm passes through the pumping coupling system 2 and is coupled at the laser medium 3 into a circular light spot with a fundamental mode Gaussian distribution with a radius of 75 μm. The laser medium 3 is an erbium-ytterbium co-doped phosphate glass microchip with a thickness of 1 mm, and the concentration of erbium ions is N e 9.88×10 25 / cm 3 , Ytterbium ion concentration N Y 2.01×10 27 / cm 3. The side of the laser medium 3 close to the pump coupling system 2 is coated with a total reflection film in the 1.54 μm band and an anti-reflection coating with a transmittance greater than 85% in the 0.98 μm band, and a coating with a transmittance of 1% in the 1.54 μm band...

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Abstract

Method for measuring the come-and-go loss in the cavity of LD pumping solid laser. The procedures are: first determining the relationship between the laser power and the pumping power measured from the experiment; which experiment result is then substituted in the rate equation to proceed numerical equating to determine the loss in the cavity; in the rate equation, considered are the laser oscillation and other transition steps which affecting the running of a laser, and considering the pumping light and laser being all Gaussian distribution. This invention method is particularly suitable for measuring the come-and-go loss in low gain microchip solid laser cavity.

Description

【Technical field】: [0001] The invention relates to the technical field of lasers; in particular, it relates to measuring the intracavity loss of an LD-pumped solid-state laser; especially measuring the intra-cavity loss of an LD-pumped solid-state laser under the condition that the laser cavity length is short and the gain is low. 【Background technique】: [0002] LD pumped solid-state lasers are small in size and low in cost, and can be widely used in many fields such as laser ranging and optical communication. In the production, development and maintenance of this laser, the round-trip loss in the cavity is an important indicator. Its relationship with the net gain of the laser is the main factor that determines the operation of the laser. In addition, accurately determining the intracavity round-trip loss is also a necessary condition for applying various laser technologies such as Q-switching, frequency stabilization, and mode selection to LD pumped solid-state lasers. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/00G01D21/00
Inventor 宋峰蔡虹刘淑静李腾田建国
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