Semiconductor device, embedded memory and manufacturing method thereof

Abstract

Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors.

Description

technical field [0001] The present invention relates to semiconductor technology, in particular to an embedded memory technology. Background technique [0002] Capacitors are widely used in semiconductor devices as elements for storing electrical charges. A capacitor essentially consists of two electrode plates separated by a dielectric material. The capacitance value or the amount of charge it can store under an applied unit voltage depends on many parameters, such as the area of ​​the electrode plates, the two electrodes The distance between the plates, and the dielectric constant of the dielectric material between the two electrode plates. Capacitors are used in filters, analog-to-digital converters, storage devices, controllers, and other kinds of semiconductor devices. [0003] A metal-insulator-metal (MIM) capacitor is one of many capacitors and is commonly used in mixed signal devices and logic devices such as embedded memories. MIM capacitors are used in various s...

AI Technical Summary

Problems solved by technology

[0004] Traditionally, the formation of MIM capacitors requires more than three layers of photomasks and complicated manufacturing processes, which have a negative impact on output and process yield, and complicated manufacturing processes are one of the reasons for potential yield reduction

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