Semiconductor chip local electronic radiation method and device

Abstract

A local electron irradiation method and a device for a semiconductor chip are provided, which comprises placing a chip on an irradiation bed of an electron linear accelerator in the electron irradiation zone of the chip, and performing the local electron irradiation to the different zones on the semiconductor chip by using the partial mask electron irradiation method. The partial mask electron irradiation method, based on the principle that metal barrier can isolate electron rays, arranges electron ray-isolating metal barriers with different thicknesses in the parts apart from electron irradiation or in need of electron irradiation with different doses, thereby realizing the independence electron irradiation to individual zones on the semiconductor chip. In particular, the lead metal barrier is used to block the electron ray for the chip parts apart from electron irradiation, thereby realizing the local electron irradiation of individual zones on the semiconductor chip.

Description

technical field [0001] The invention relates to a processing method and device for a semiconductor device, in particular to a method and device for local electron irradiation of a semiconductor chip of a power electronic thyristor device. The technology of the invention is mainly used for chips of high-power thyristor devices In the electron irradiation process, such as the positioning electron irradiation of the diode part in the reverse conduction GCT device, it can also be used for the partial electron irradiation treatment of the chip of other semiconductor components. Background technique [0002] During the chip processing of many semiconductor devices, electron irradiation treatment must be carried out on its surface. Since most of the traditional high-power thyristor and diode processing adopt uniform electron irradiation technology, this electron irradiation method is harmful to the same semiconductor chip. Different regions cannot carry out independent electronic r...

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Problems solved by technology

Mainly through three different ways of irradiation and post-irradiation annealing process to optimize the overall parameters of the device, but does not involve local electron irradiation control in different regions; Chinese patent application (patent application number is 200510011701.6; The title is "high-power fast soft recovery diode and its production process") also discloses a high-power semiconductor device manufacturing process, which also refers to chip electron irradiation and other processes, but the invention technology only involves discrete high-power The contradictory coordination between the forward voltage drop and reverse recovery characteristics of fast soft recovery diodes makes the reverse recovery characteristics of high-power fast soft recovery diodes both fast and soft to meet the needs of high-power fast thyristors, GTOs, IGCTs and IGBTs. Requirements for anti-merging, absorption, and freewheeling of high-frequency devices, but it does not involve the control of local electronic radiation in different areas of the chip

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