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Method for non-destructively detecting line width coarse phenomenon

A non-destructive detection, line width rough technology, applied in measurement devices, semiconductor/solid-state device testing/measurement, instruments, etc., can solve problems such as charge accumulation, 193nm photoresist damage, etc.

Inactive Publication Date: 2008-03-19
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the downside of this e-beam CD inspection technique is that it can cause damage to the 193nm photoresist, and can also create unwanted charge buildup on the wafer or in the dielectric material

Method used

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  • Method for non-destructively detecting line width coarse phenomenon
  • Method for non-destructively detecting line width coarse phenomenon
  • Method for non-destructively detecting line width coarse phenomenon

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Embodiment Construction

[0021] With the miniaturization of the component size and the smaller and smaller process margin window, the precision and accuracy of the CD detection equipment in the semiconductor process are also getting higher and higher, especially when the critical size of the semiconductor component is reduced to tens of nanometers , line edge roughness or so-called line width roughness becomes a very critical problem to be overcome. As mentioned above, the line pattern on the wafer has line-edge roughness mainly due to the accumulation of the photoresist material and etching steps that define the line pattern. Below the 90nm level, the profile control of key element layers such as gate patterns is very important, which is directly related to the yield rate and the performance of the transistor.

[0022] In view of this, the present invention provides a non-destructive optical detection method to effectively detect line edge roughness or so-called line width roughness on a wafer, for e...

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Abstract

A non-destructive method for detecting the line width roughness is provided. A wafer is firstly provided, which has a test key zone where a plurality of grids are provided. Then the wafer is placed in a spectral key size detecting machine which is equipped with a light source, a detector and a data processing and arithmetical unit. A polarized light is emitted by the light source and irradiated onto the surface of the grids, the reflective ray is measured, the spectral data is stored in the data processing and arithmetical unit and compared with a databank which stores theoretic spectral data based on the contact hole mode and containing the parameter describing different phenomena of line width roughness. The spectral data is compared with the theoretic spectral data stored in the databank, to find out the most fitting one which is the parameter indicative of the real situation of line width roughness.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for nondestructively detecting the phenomenon of line width roughness (Line Width Roughness, LWR). Background technique [0002] In the semiconductor industry, in order to obtain a higher component density on a limited chip area, chip manufacturers have made every effort to develop in the technical direction of reducing the size of a single component in recent years. Roughly, the critical dimension of components will be reduced by half every six years. However, when the line width defined by the photolithography process becomes thinner and thinner, the edges of the thin line patterns will be limited by the capabilities of the photolithography process. Causes distortion and produces line edge roughness. This line edge roughness (Line Edge Roughness, LER) phenomenon is generally known as the line width roughness (Line Width Roughness, LWR) phenomenon, which has s...

Claims

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Application Information

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IPC IPC(8): H01L21/66G01B11/30
Inventor 孙介伟洪文凯林思闽
Owner UNITED MICROELECTRONICS CORP