Reworking processing method
A processing method and ashing technology, which are applied in the processing of photosensitive materials, the photoengraving process of the pattern surface, and the coating equipment of the photoengraving process, etc. The same etching rate, uncontrollable etching open circuit defects, etc., achieve the effect of reducing production cost and improving yield
Active Publication Date: 2010-06-23
SEMICON MFG INT (SHANGHAI) CORP +1
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However, considering the difference in material properties of the anti-reflective coating and the dielectric layer, if the etching rate of the anti-reflective coating and the dielectric layer is controlled to be the same, different etching process parameters must be set for the anti-reflective coating and the dielectric layer, but due to The surface unevenness caused by the damage on the surface of the dielectric layer makes it difficult to accurately control the boundary between the anti-reflective coating and the dielectric layer in the actual production process, that is, it is difficult to control the same etching rate of the anti-reflective coating and the dielectric layer in the existing process. The method still cannot control the above-mentioned etching open circuit defects that may be caused after the photoresist layer rework process
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[0023] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.
[0024] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...
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Abstract
A rework processing method is provided, wherein, the photoresist layer is positioned on the surface of a dielectric layer. The rework processing method includes that the photoresist layer needing to be reworked is determined and undergoes incineration treatment; the dielectric layer undergoes the process of surface stripping; the photoresist layer is coated again and patterned; the photoresist layer is detected and the unqualified photoresist layer after detected repeats the processes, and the qualified photoresist layer is acquired. After the photoresist layer is removed and the process of surface stripping of the dielectric layer is added, the degenerative folium on the surface of the dielectric layer can be removed, and the surface of the dielectric layer with uniform nature can be acquired after the photoresist layer is reworked, thereby etch rate of the surface of the dielectric layer in the follow-up etch process is not changed, and etch opencircuit shortcoming is avoided with good rework effect.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a rework processing method. Background technique [0002] The photoresist layer is used as the initial mask layer in the integrated circuit manufacturing process, and its patterning accuracy will have an important impact on the accuracy and performance of the entire integrated circuit product. [0003] In the actual production process, in order to ensure the process accuracy, the line width detection is required after the photoresist layer is patterned, and the patterned photoresist layer can be used as a mask layer for subsequent etching after the detection is qualified. etching process. If the detection is unqualified, that is, under-exposure or over-exposure causes under-development or over-development, resulting in deviation of the etching size, rework is required. The rework process is to remove the patterned photoresist layer, and then re-coat, pattern...
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IPC IPC(8): G03F7/16G03F7/42G03F7/00H01L21/027
Inventor 李建茹宋铭峰
Owner SEMICON MFG INT (SHANGHAI) CORP