Optical sensor, solid-state imaging device, and operation method of solid-state imaging device
A solid-state imaging device and motion technology, which can be applied to electric solid-state devices, radiation control devices, image communication, etc. The effect of /N ratio
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no. 1 approach
[0079] figure 1An equivalent circuit diagram showing one pixel of the solid-state imaging device of this embodiment, figure 2 Indicates a schematic sectional view, image 3 Indicates a schematic top view.
[0080] Each pixel is composed of the following parts: a photodiode PD1 that receives light and generates photocharges; a transfer transistor T2 that transmits photocharges provided adjacent to the photodiode PD1; a floating diffusion FD3 that is connected to the photodiode PD1 via the transfer transistor T2; The transfer transistor T2 stores the first storage capacitor CSa4 and the second storage capacitor CSb5 of the photocharge overflowed from the photodiode PD1 during the exposure and storage operation; it is connected to the first storage capacitor CSa4 to discharge the first storage capacitor. Capacitor CSa4, second storage capacitor CSb5 and reset transistor R6 for signal charge in floating diffusion FD3; first storage transistor Ca7 arranged between floating diff...
no. 2 approach
[0108] This embodiment is an embodiment of another operating method of the solid-state imaging device according to the first embodiment. The structure of the solid-state imaging device of this embodiment and Figure 1 ~ Figure 4 The same applies to the solid-state imaging device of the first embodiment described above. However, the threshold voltage of the first storage transistor Ca and the second storage transistor Cb is lower than that of the transfer transistor T. As shown in FIG.
[0109] Figure 8 is a main driving time chart of the solid-state imaging device of this embodiment, Figure 9 is a partial schematic potential diagram from the photodiode of the pixel through the floating diffusion FD, the first storage capacitor to the second storage capacitor.
[0110] First, before exposure and storage, the first storage transistor Ca and the second storage transistor Cb are turned on, and the transfer transistor T and reset transistor R are turned off. Next, the reset t...
no. 3 approach
[0117] Figure 10 An equivalent current diagram showing one pixel of the solid-state imaging device of this embodiment, Figure 11 shows a schematic cross-sectional view, a schematic plan view and the first embodiment image 3 same.
[0118]Each pixel is composed of the following parts: a photodiode PD1 that receives light and generates photocharges; a transfer transistor T2 that transmits photocharges provided adjacent to the photodiode PD1; a floating diffusion FD3 that is connected to the photodiode PD1 via the transfer transistor T2; During the exposure storage operation, the first storage capacitor CSa4 and the second storage capacitor CSb5 that store the photocharge overflowed from the photodiode PD1 through the transfer transistor T2 are connected to the floating diffusion FD3 to discharge the floating diffusion FD3 and the first storage capacitor. Capacitor CSa4 and the reset transistor R6 of the signal charge in the second storage capacitor CSb5; the first storage t...
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