System, method and apparatus for high power cmos antenna switch

Abstract

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a -60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

Description

[0001] related application [0002] This application claims U.S. Provisional Application No. 60 / 868,172, filed December 1, 2006 and entitled "Systems, Methods, and Apparatuses for High Power Complementary MetalOxide Semiconductor (CMOS) Antenna Switches Using Body Switching and Substrate Junction Diode Controlling in Multistacking Structure" priority, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates generally to antenna switches, and more particularly, to complementary metal oxide semiconductor (CMOS) antenna switches. Background technique [0004] Over the past decade, the wireless communication industry has experienced explosive growth, which in turn has accelerated the development of the integrated circuit (IC) industry. In particular, in the IC industry, various mobile application systems such as low noise amplifiers (LNAs), mixers, and voltage controlled oscillators (VCOs) have been integrated into CMOS t...

AI Technical Summary

Problems solved by technology

[0006]However, existing CMOS technology presents various difficulties for its application to RF switches

In particular, CMOS material properties (including lossy substrate due to low mobility of electrons and low breakdown voltage due to p-n junction, hot-carrier effect) hinder the application of CMOS technology requiring multi-band operation, RF switches for high power levels, and / or integration with other devices and circuits

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