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Coating compositions for photolithography

A technology of composition and organic composition, applied in photosensitive materials, coatings, optics, etc. for optomechanical devices, can solve uneven line width, resolution limit, uneven photoresist line width, etc. question

Active Publication Date: 2011-10-12
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Reflection of the activating radiation used to expose the photoresist typically places a limit on the resolution of the patterned image in the photoresist layer
Reflection of radiation from the substrate / photoresist interface can produce spatial variations in radiation intensity in the photoresist, resulting in non-uniform photoresist linewidths upon development
Radiation can also scatter from the substrate / photoresist interface to unintentionally exposed photoresist areas, which also leads to linewidth variations
The amount of scattering and reflection will generally vary from region to region, causing additional linewidth non-uniformity
Variations in substrate surface conditions can also cause resolution limit issues

Method used

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  • Coating compositions for photolithography
  • Coating compositions for photolithography
  • Coating compositions for photolithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0122] The synthesis of embodiment 1 modified polyglutarimide

[0123] Anhydrous potassium carbonate (9.0 g) was added with stirring to 15.3 g of polyglutarimide (Mw 19096, polydispersity index 1.7 and nitrogen content ca. 9%). The mixture was stirred at 21°C for 30 minutes. Tert-butyl bromoacetate (20.0 g) was slowly added to the mixture, followed by heating at 75°C for 18 hours. After cooling, the resulting salt was removed by filtration and washed with a small amount of N,N-dimethylformamide. The combined filtrates were slowly precipitated into 1.0 L of demineralized water acidified with 50 mL of 0.1N hydrochloric acid. The precipitated product was collected on a filter and washed with about 200 mL of demineralized water. After being partially dried on the filter, the polymer was slurried in two 200 mL portions of methanol. The product was partly dried on the filter and further dried under vacuum at 50°C, yielding about 19.8 g of modified polymer. GPC analysis showed ...

Embodiment 2

[0125] Triethylamine (0.05 g) was added under stirring to 15.3 g of polyglutarimide (Mw 19096, polydispersity index 1.7 and nitrogen content ca. 9) dissolved in 155 g N,N-dimethylformamide. %)middle. The mixture was stirred at 21°C for 30 minutes. Di-tert-butyl dicarbonate (22.0 g) was slowly added to the mixture at 25°C, followed by stirring for 18 hours. The solution was slowly precipitated into 1.0 L of demineralized water. The precipitated product was collected on a filter and washed with about 200 mL of demineralized water. After being partially dried on the filter, the polymer was slurried in two 200 mL portions of methanol. The product was partly dried on the filter and further dried under vacuum at 50°C, yielding about 18.4 g of modified polymer.

Embodiment 3

[0127] Anhydrous potassium carbonate (9.0 g) was added with stirring to 15.3 g of polyglutarimide (Mw 19096, polydispersity index 1.7 and nitrogen content ca. 9%). The mixture was stirred at 21°C for 30 minutes. Benzyl bromide (3.4 g) was slowly added to the mixture, followed by stirring at 21°C for 4 hours. Tert-butyl bromoacetate (20.0 g) was slowly added to the mixture, followed by heating at 75°C for 18 hours. After cooling, the resulting salt was removed by filtration and washed with a small amount of N,N-dimethylformamide. The combined filtrates were slowly precipitated into 1.0 L of demineralized water acidified with 50 mL of 0.1 N hydrochloric acid. The precipitated product was collected on a filter and washed with about 200 mL of demineralized water. After being partially dried on the filter, the polymer was slurried in two 200 mL portions of methanol. The product was partially dried on the filter and further dried under vacuum at 50°C, yielding about 20.0 g of m...

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Abstract

Underlying coating compositions are provided that comprise one or more resins comprising one or more modified imide groups. These coating compositions are particularly useful as antireflective layers for an overcoated photoresist layer. Preferred systems can be thermally treated to increase hydrophilicity of the composition coating layer to inhibit undesired intermixing with an overcoated organiccomposition layer, while rendering the composition coating layer removable with aqueous alkaline photoresist developer.

Description

technical field [0001] The present invention generally relates to the field of electronic device fabrication. In particular, the invention relates to the fabrication of integrated circuit devices involving the use of novel compositions and processes. Background technique [0002] The present invention includes compositions (including antireflective coating compositions or "ARCs") that can reduce exposure of radiation from the backside of a substrate to a coated photoresist layer and / or serve as planarization or via filling layer of reflection. More particularly, the present invention relates to organic coating compositions, especially antireflective coating compositions, comprising one or more modified bismuth compounds comprising, for example, modified glutarimide and / or maleimide groups. Resins with imide groups. [0003] Photoresist is a photosensitive film used to transfer an image onto a substrate. A coating of photoresist is formed on the substrate, and the photore...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004C09D201/02
CPCG03F7/0392G03F7/091G03F7/11
Inventor A·赞皮尼M·K·噶拉格尔V·简恩O·昂格伊
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC