Method for evaluating development capability

Abstract

A method of assessing developing capacity comprises the following steps: a photoresist layer is formed on a control wafer; a first thickness is obtained by measuring the photoresist layer; the photoresist layer is developed; a second thickness is obtained by measuring the developed photoresist layer; the thickness difference of the photoresist layer is obtained by subtracting the second thickness from the first thickness of the photoresist layer; the greater the thickness difference is, the stronger the developing capacity is. With the steps, the cost of assessing the developing capacity of a developer is reduced; at the same time, the quality of the semiconductor devices of the actual process is not affected, and the yield is increased.

Description

technical field [0001] The invention relates to the manufacture of semiconductor devices, in particular to a method for evaluating developing ability in the photolithography process of semiconductor devices. Background technique [0002] As the integration level of semiconductor devices is getting higher and higher, the line width of semiconductor devices is getting thinner and thinner, and the requirements for photolithography are also higher. [0003] For the method of forming a photoresist pattern in the existing photolithography process, please refer to the technical solution disclosed in the Chinese Patent No. 01140031. Such as Figure 1A As shown, first a wafer 100 is provided, on which a semiconductor device structure (not shown) is formed; on the wafer 100 with the semiconductor device structure, a layer 102 to be etched is formed, and the layer 102 to be etched is such as a metal layer , a polysilicon layer, a silicon nitride layer or a silicon oxide layer; a photo...

AI Technical Summary

Problems solved by technology

[0007] In the existing photolithography process, photoresist residues are usually caused by insufficient development, which affects the quality of subsequent semiconductor devices; in order to evaluate the developing ability of the developing machine—the effect of developing photoresist, it is generally necessary to After the semiconductor device is sliced, it is made into a scanning electron microscope sample to observe whether there is any photoresist residue, which increases the cost and affects the yield of the semiconductor device

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