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Storage element and memory

A storage element and memory technology, which is applied in the field of memory, can solve problems such as difficult enough current flow, thinning of address wiring, etc., achieve good balance characteristics, increase magnetic resistance change rate, and increase thermal stability Effect

Inactive Publication Date: 2012-05-23
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] However, as the size of elements forming MRAM continues to decrease, address wiring becomes thinner
Therefore, it may be difficult to flow a sufficient amount of current through the address wiring

Method used

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Embodiment Construction

[0064] Before describing the specific embodiments of the present invention, the gist of the present invention is explained first.

[0065] In the present invention, information is recorded by reversing the direction of magnetization in the recording layer of the memory element by spin injection. The memory layer includes a ferromagnetic layer or other magnetic material, and holds information based on the magnetization state (magnetization direction) of the magnetic material.

[0066] The basic operation of the reversal of the magnetization direction in the magnetic layer due to spin injection involves passing a current in a direction perpendicular to the film plane through a memory storage device formed by a giant magnetoresistance effect (GMR) element or a magnetic tunnel junction (MTJ) element. An element in which the magnitude of the current is equal to or greater than a certain threshold (Ic). At this time, the polarity (direction) of the current depends on the direction ...

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Abstract

Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8*10<-7> CR m or more.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Application JP 2006-350113 filed in the Japan Patent Office on December 26, 2006, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a storage element suitable for use as a non-volatile memory in which the magnetization direction of a storage layer is changed by injection of spin-polarized electrons, and a memory having these storage elements. Background technique [0004] High-speed and high-density DRAMs have been widely used as random access memories in information equipment such as computers. [0005] However, since DRAM is a volatile memory that deletes information when power is turned off, a nonvolatile memory that can retain information when power is turned off is required. [0006] As one candidate of such non-volatile memory, a magnetic random access memory (MRAM) th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L27/22G11C11/16G11C11/15H01F10/32
CPCG11C11/16Y10S977/935G11C11/15H01L27/105G11B5/39H10N50/10
Inventor 细见政功大森广之五十岚实山元哲也肥后丰山根一阳大石雄纪鹿野博司
Owner SONY CORP
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