Method of forming oxide based nano structures

Abstract

Provided is a method of forming an oxide-based nano-structured material including growing a nano-structured material using a nano-nucleus having the same composition as the desired oxide-based nano-structured material. A solution is coated on a substrate, the solution including: an organic precursor containing M which is a transition metal or a semi metal; and an organic solvent in which the organic precursor is dissolved. A nano-nucleus having a composition of MxOy is formed on the substrate by annealing the substrate. A nano-structured material having a composition of MxOy is formed by growing the nano-nucleus while supplying a reaction precursor containing M into the nano-nucleus, and the nano-structured material is annealed.

Description

[0001] Cross References to Related Patent Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2006-0122630 filed on December 5, 2006 and Korean Patent Application No. 10-2007-0036582 filed on April 13, 2007 with the Korean Intellectual Property Office, at The entire disclosure thereof is hereby incorporated by reference. technical field [0003] The present invention relates to a method of forming an oxide-based nanostructure material, and more particularly, to a method of forming a nanostructure material using an oxide of a transition metal or semimetal. Background technique [0004] Oxide-based nanostructured materials containing metal or non-metal elements are potentially applicable in the field of nanoelectronic devices such as field effect transistors (FETs), single electron transistors (SETs), photodiodes, biochemical sensors, and logic circuits. Accordingly, research into the properties of nanostructured materials and methods...

AI Technical Summary

Problems solved by technology

Additionally, manufacturing costs increase due to precious metals

Therefore, the large-scale production of oxide-based nanostructured materials is limited

[0008] In addition, because they have different compositions, the connection between noble metal particles or clusters and oxide-based nanostructured materials is incomplete, and dopants are not easily implanted into the resulting nanostructures.

Specifically, although materials used in nanostructured materials themselves have excellent electrical properties, it is not easy to control the growth rate, size, and shape of nanostructured materials according to the plane index of noble metals used as cores.

Therefore, oxide-based nanostructured materials cannot have uniform composition, shape, and size, nor do they have stable properties

Therefore, since oxide-based nanostructured materials formed according to conventional methods provide unstable electrical properties, their application to integrated high-speed electronic circuits is limited.

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